Analytical Equipment Product List and Ranking from 263 Manufacturers, Suppliers and Companies

[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

Evaluation of the top surface of modified layers of polymers, resins, and films using TOF-SIMS is possible.

On the surface of cell culture dishes, treatments are performed to convert hydrophobic plastic surfaces to hydrophilic ones in order to enhance cell adhesion. In this study, the surfaces of dishes that underwent hydrophilic treatment were evaluated using XPS and TOF-SIMS, revealing an increase in OH and CHO groups. By conducting quantitative evaluations with XPS and qualitative evaluations with TOF-SIMS, it is possible to capture how the surface has changed.

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[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

Quantitative evaluation of metal components is possible near the bevel area.

In semiconductor device manufacturing, it is necessary to remove metals remaining on the backside of the wafer from the perspective of improving yield, and it is important to quantitatively understand the amount of metal components remaining. To investigate the concentration distribution of metals remaining on the backside within a range of 500 µm from the bevel area, we conducted evaluations using TOF-SIMS. TOF-SIMS has the spatial resolution to detect metal components only near the bevel area, and by using standard samples with known concentrations, it is possible to quantitatively calculate the concentrations.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

In depth-direction analysis of molecular information obtained by TOF-SIMS, (1) the depth resolution is good, (2) it is possible to distinguish the chemical states of inorganic materials such as oxides, nitrides, fluorides, carbides, alloys, and metals, (3) evaluation of trace states is possible, (4) monitoring of OH is possible, (5) relative comparisons between samples (film thickness, composition) are possible, and (6) image analysis allows for a visual capture of the distribution of states at the surface level of a few nanometers. We will summarize the results of natural oxide films and oxide films. Measurement method: TOF-SIMS Product field: LSI, memory Analysis purpose: evaluation of chemical bonding states, evaluation of composition distribution, thickness of corrosion layers For more details, please download the materials or contact us.

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[Analysis Case] Distribution and State Evaluation of OH on Aluminum (Al) Surface

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

The presence of OH and fluoride on the surface of aluminum electrodes is one of the causes of electrode corrosion, and investigating the state of the aluminum surface is essential for identifying the causes of defects. TOF-SIMS excels in depth resolution at the very surface and can measure depth distribution with high sensitivity while monitoring the state of inorganic substances. By evaluating the depth distribution along with OH, we discovered a phenomenon where OH increased without a change in the thickness of the oxide film. In this way, TOF-SIMS enables the evaluation of depth distribution of molecular information of inorganic substances that cannot be obtained through elemental analysis.

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[Analysis Case] Evaluation of Impurities in Metal Wires

Visualizing the in-plane distribution of impurities such as atmospheric components with a field equivalent to SEM.

SIMS analysis can be applied to various shapes of samples beyond wafers and substrates. In this case study, we will introduce an example of evaluating the distribution of impurities in a wire. The results of evaluating the impurity distribution in the depth direction from the side of the wire (Figure 2) indicate that the impurity profiles of H, O, F, S, and Cl vary in intensity with depth, suggesting that they are localized within the wire. The elemental mapping of the wire cross-section (Figure 3) confirmed the localization of impurities within the wire.

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

It is possible to obtain the dopant concentration profile from the SiC substrate side.

In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.

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[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients

You can measure the 300mm wafer as it is.

TOF-SIMS has the characteristics of simultaneously evaluating organic and inorganic materials, being capable of analyzing small areas with high sensitivity at the very surface, and allowing evaluation while still in the form of 300mm wafers, making it effective for residue investigations during cleaning processes. We will introduce an analysis case of the removal effect of organic contamination on Si surfaces. TOF-SIMS analysis was conducted on samples where amine-based organic materials were confirmed to be in extremely small quantities by XPS. Even in small areas, it is possible to measure components in such extremely small amounts.

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

Measurements will be taken according to the analysis conditions suited to the purpose.

This paper presents examples of evaluating the depth concentration distribution of the dopant elements N, Al, and P in commercially available SiC power MOSFETs using multiple analysis modes. Depending on the analysis objectives, it is possible to measure multiple elements simultaneously without measuring each element separately under optimal conditions. Examples are provided for cases of simultaneous multi-element measurement and measurements focused on each individual element.

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Quantification of Hydrogen Bonding States in SiN Films

Quantification of Si-H and N-H in SiN films using infrared absorption method.

It is possible to determine the concentrations of Si-H and N-H in SiN films through FT-IR analysis. Although it is also possible to determine hydrogen concentration using analyses such as SIMS, this provides the total hydrogen concentration and does not allow for the separate determination of hydrogen bonded to Si and hydrogen bonded to N. In FT-IR, the Si-H stretching vibration and N-H stretching vibration have peaks at different positions, allowing us to use these peaks to determine the respective hydrogen concentrations. Below are examples of analyses that determined the concentrations of Si-H and N-H in SiN films on Si substrates.

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[Analysis Case] Ginseng - LC/MS/MS Analysis of Herbal Components

Simultaneous analysis of six types of ginsenosides (Rb1, Rc, Rd, Re, Rg1, Rg3)

The main component of Korean ginseng, which is widely used as a herbal medicine, is a saponin called ginsenoside. Ginsenosides are classified based on the way sugars are attached, and currently, about 30 types have been discovered. In this case, we will introduce an example of analyzing ginsenosides using LC/MS/MS. With LC/MS/MS, we confirmed that the double filtering effect of MRM allows for the separation of peaks from six structurally similar compounds, enabling simultaneous qualitative and quantitative analysis.

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[Analysis Case] Evaluation of H Concentration in IGZO Film

It is possible to evaluate the depth distribution of H in the IGZO film with high sensitivity.

IGZO films are materials that are being researched and developed as TFT materials for displays. The carrier concentration changes according to the hydrogen concentration in the IGZO film, leading to variations in electrical characteristics. Therefore, it is necessary to accurately measure the hydrogen concentration in the film for evaluating the device characteristics and reliability of devices using IGZO films. We will introduce a case study that evaluated the hydrogen concentration in IGZO films under different heating conditions using SIMS.

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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

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[Analysis Case] Analysis of Microscopic Contaminants on Wafer Surface

Composition analysis of 30nm size is possible without processing.

AES analysis is a method for obtaining compositional information from the surface down to a depth of several nanometers, and it is an effective analysis for investigating the composition of contaminants and foreign substances that occur on the surface during the manufacturing process. Since it rarely detects information about the substrate or base material, it allows for a simple examination of only the abnormal areas, such as foreign substances, without preprocessing. Additionally, by conducting surface analysis, it is possible to obtain elemental distribution images. In this case study, we will present data evaluated using AES analysis regarding foreign substances present on a Si wafer.

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[Analysis Case] Simultaneous Analysis of 17 Free Amino Acids

High-sensitivity and selective amino acid analysis is possible using the OPA post-column method.

The OPA post-column method is a technique that reacts amino acids with the fluorescent reagent OPA after separation in a column and detects the fluorescence (Figures 1, 2). This method allows for high-sensitivity analysis compared to the ninhydrin method. The fluorescent reagent OPA selectively reacts with primary amines, making it less susceptible to interference from contaminants and enabling highly selective analysis. Proline is a secondary amino acid, but it can be converted into a primary amine by adding sodium hypochlorite to the reaction solution, allowing for measurement. This document presents a case study of simultaneous measurement of 17 amino acid components, including proline (Figure 3).

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[Analysis Case] Fluorescent X-ray Analysis Case of Metal Materials

As a metal composition evaluation, we recommend starting with elemental screening using XRF analysis.

When conducting elemental analysis, it is possible to establish an efficient evaluation plan by first using XRF analysis to non-destructively examine the elements contained in the target before moving on to detailed analysis. In this case, we present data from XRF analysis conducted on blades for metal cutting. By performing surface analysis over a wide range on the order of millimeters, we roughly examined the distribution of metallic elements in the material and estimated the metal composition by calculating the elemental composition from the XRF point analysis results of characteristic areas. Measurement method: XRF Product field: Manufacturing equipment, parts, daily necessities Analysis purpose: Composition evaluation, identification, composition distribution evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

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[Analysis Case] Analysis of Smartphone Sealants by Pyrolysis GC/MS

Analysis of UV-curable materials is possible through two-stage heating.

Using a two-stage heating method with thermal decomposition GC/MS, we analyzed the material of the sealing agent around the display of commercially available smartphones. By heating the sample at a low temperature (250°C) and measuring the gas components generated using GC/MS, we can detect residual monomers and low molecular weight additives (polymerization initiators, antioxidants). Subsequently, by heating at a high temperature (550°C), we can decompose the polymers and estimate their constituent components. This revealed that the sealing agent is made of a UV-curable material.

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[Analysis Case] Investigation of Contamination Causes on Silicon Wafers

Evaluation of contamination originating from gloves

In semiconductor device manufacturing, it is necessary to investigate what causes thin deposits that lead to defects in order to examine contamination processes. An analysis was conducted using TOF-SIMS on the deposits for which carbon was detected by EDX and quantified by XPS. When compared to the gloves used for standard samples in each process, similar trends were observed with gloves A and B. Furthermore, verification was performed by adhering the standard sample gloves to silicon wafers. As a result, it was found that they were similar to glove A. Adhering standard samples to silicon wafers for verification is an effective method.

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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

We will enhance the sensitivity and evaluate the concentration distribution at the ppt level.

The detection sensitivity in SIMS analysis depends on the amount of sputtered sample per unit time. Depending on the element, significantly improved sensitivity can be achieved by limiting the impurities to one element, allowing evaluation down to ppt (parts per trillion) levels of less than 5E13 atoms/cm3, which is effective for assessing low-concentration impurities in IGBT devices and high-purity wafers. This document presents examples of ultra-high sensitivity evaluations of low-concentration impurities in silicon.

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[Analysis Case] Analysis of Additive Components in Polymer Films

Surface and depth distribution evaluation of additives in the film using GCIB.

Food wrap films may use additives to ensure stability against thermal exposure during the manufacturing process and to impart plasticity. These additives are required to remain stable under cooking conditions without changing. In this case, we present the results of an investigation using TOF-SIMS to examine whether the state of one of the additives, Irgafos168, changes (bleeds out) before and after heating. *GCIB: Gas Cluster Ion Beam

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[Analysis Case] High-Precision Quantification of the sp2/(sp2+sp3) Ratio of DLC Films

High-precision analysis using XAFS

DLC (diamond-like carbon) films, which are widely used as coating materials in various fields, are composed of a mixture of carbon elements with sp3 hybrid orbitals corresponding to a diamond structure and carbon elements with sp2 hybrid orbitals corresponding to a graphite structure when viewed from a microscopic perspective. One indicator that determines the properties of DLC films is the sp2/(sp2+sp3) ratio. High-precision quantification of the sp2/(sp2+sp3) ratio in DLC films is possible using XAFS.

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[Analysis Case] Analysis of Evolved Gases during High-Temperature Heating in Air by Pyrolysis GC/MS

It is possible to track the thermal decomposition behavior in the presence of oxygen.

The decomposition behavior of materials when heated in a vacuum or in inert gases such as nitrogen can differ from that when heated in air. Therefore, when conducting gas emission analysis, it is desirable to heat the materials in an environment that closely resembles the actual conditions to which they are exposed. In this case, a comparison of the gases emitted during the pyrolysis of polystyrene at 550°C in helium and in air was conducted. Only hydrocarbon compounds were detected in helium, whereas reaction products with oxygen, such as benzaldehyde, were also detected in air.

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[Analysis Case] Residue Analysis of Cotton Swabs with Ethanol

Analysis of stains and cleaning residues that are not visible under an optical microscope is possible using TOF-SIMS.

In general, to remove dirt, a cotton swab may be dipped in ethanol and used for wiping. When the surface of a Si wafer was wiped with a cotton swab dipped in ethanol, an analysis was conducted using TOF-SIMS to determine what was distributed on the surface. The Si wafer wiped with the cotton swab showed stains that were not visible under an optical microscope, and it was found that these were due to the cotton swab. TOF-SIMS is effective for analyzing stains that are not visible under an optical microscope and for cleaning residues.

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[Analysis Case] Evaluation of Nickel Plating Peel-off Surface by TOF-SIMS

Investigation of the causes of coating peeling and poor adhesion through TOF-SIMS analysis.

To investigate the delamination issue that occurred on the nickel plating over bronze, TOF-SIMS analysis was conducted. By forcibly delaminating the affected area and performing qualitative analysis with TOF-SIMS, siloxanes and potassium compounds (such as potassium chloride and potassium sulfate) were detected from the delamination surface. These components are believed to be the cause of the delamination.

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[Analysis Case] Qualitative Analysis of Powder Contaminants

By combining techniques, it is possible to obtain multiple types of component information.

In the analysis of foreign substances, it is important to appropriately select the analytical methods based on the size of the foreign substance, the expected materials, and the condition of the substrate. By combining techniques such as optical microscopy, elemental analysis (XRF), and bonding state analysis (XRD, FT-IR), it is possible to gain insights into the multiple components contained in the powder. This document presents examples of qualitative analysis of powder foreign substances using the aforementioned methods.

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[Analysis Case] Evaluation of Composition Distribution in Bone Cross-Sections

Visualization of the composition distribution of mouse tibial cross-sections using TOF-SIMS.

To evaluate the component distribution in mouse tibia, we prepared tibial sections and conducted imaging analysis using TOF-SIMS. The distribution of components derived from mice, such as K, Ca, calcium phosphate, and phospholipids, was confirmed. Since TOF-SIMS identifies components based on the mass of molecular ions, it does not require labeling substances like fluorescent materials, allowing for distribution evaluation without the influence of labeling agents. This technique can be applied to drug dynamics analysis and research on Drug Delivery Systems (DDS), enabling imaging of drug distribution within organs.

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Analysis case: Evaluation of foreign substances present in resin.

Evaluation of foreign substances in resin is possible using TOF-SIMS through cross-section processing of the sample.

When evaluating organic foreign substances present in resin, it may be difficult to assess them in their original state depending on the sample and analysis conditions. Therefore, we will introduce a case where evaluation became possible by cross-sectioning the resin to expose the foreign substances at the surface. After exposing foreign substances measuring several tens of micrometers that were mixed into epoxy resin through cross-sectioning, we evaluated them using TOF-SIMS. We were able to identify the components of the foreign substances and confirm their distribution.

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