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  1. Home
  2. Electronic Components and Semiconductors
  3. イサハヤ電子
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Electronic Components and Semiconductors
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イサハヤ電子

EstablishmentMarch 26, 1973
capital48597Ten thousand
addressOsaka/Kita-ku, Osaka-shi/1-5 Tōyama-cho (Sankyō Umeda Building 9F)
phone06-4709-7218
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last updated:Jun 17, 2025
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イサハヤ電子 List of Products and Services

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Quad diode

Consolidation of existing double diodes. Contributing to further reduction in implementation area!

Due to the multiple elements being input, the microcontroller board can protect four lines as overvoltage protection. Additionally, since the elements within the chip share both anode and cathode, it is a product that can provide overvoltage protection in both positive and negative directions. This product significantly contributes to the miniaturization of the set.

  • diode

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Gate Drive Unit "VLB524-01R"

Compatible with 1200V/600A class IGBT module drive!

The "VLB524-01R" is a gate drive unit for IGBT modules that can be directly mounted on NX type and EconoDUAL type IGBT modules. This product is compatible with 1200V/600A class IGBT modules. A similar product, the "VLA598-01R," is available, which supports up to 1700V class; however, the "VLB524-01R" is specifically designed for the 1200V class, making it a more cost-effective option! It is recommended for customers aiming for low costs and those using NX type or EconoDUAL type modules. <Features> ● Can be directly mounted on NX type and EconoDUAL type modules ● Built-in dual gate drive circuits ● Built-in isolated DCDC converter for gate power supply ● Maximum gate output peak current ±9A ● Input-output isolation voltage withstand 2500Vrms (for 1 minute) ● Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

  • power supply

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Gate Drive Unit "VLB525/VLB526-01R"

Supports driving 1700V/600A class SiC-MOSFET modules!

The "VLB525-01R/VLB526-01R" is a gate drive unit for driving NX type SiC-MOSFET modules manufactured by Mitsubishi Electric Corporation. <Features> - Can be directly mounted on NX type SiC modules - Built-in dual gate drive circuits - Built-in isolated DC-DC converter for gate power supply - Isolation voltage withstand between input and output: 4000Vrms (for 1 minute) - Supports high-frequency switching → FMF600DXE-34BN: f=75kHz (max) → FMF600DXE-24BN: f=90kHz (max) Regarding short-circuit protection, it has been verified that protection can be achieved under certain conditions. However, the modules manufactured by Mitsubishi Electric Corporation are not guaranteed for short-circuit protection, so while the use of our driver may allow for short-circuit protection to function under certain conditions, we cannot guarantee this. We kindly ask that you evaluate it thoroughly before use. *For more details, please refer to the PDF document or feel free to contact us.

  • power supply

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Dimming signal generation PWM controller IC 'RT8H114C'

PWM controller IC for generating dimming signals with adjustable duty ratio and frequency!

The "RT8H114C" generates pulse signals with adjustable duty ratio and frequency. Therefore, it is an ideal product for dimming LEDs based on the duty ratio of the on-time or for use with ICs that require pulse signal input. The duty ratio of the output signal can be set by adjusting the voltage at the DUTY terminal, and the frequency can be set by adjusting the values of the resistor and capacitor connected to the CT terminal. Additionally, by applying input voltage to the ON/OFF terminal, it is possible to forcibly drop the output to 0V. We also offer a free evaluation demo board that can be combined with the current driver IC (RT8H144C). Please feel free to contact our sales team when you need it!

  • ASIC

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150V high voltage bipolar transistor

Gate drive for high-side MOSFET, perfect for audio amplifiers!

It has high voltage resistance and low output capacity, making it ideal for audio equipment such as gate driving for high-side MOSFETs and discrete amplifiers with high power supply voltage. The composite type ensures pairing of hFE and VBE by incorporating adjacent chips, allowing for application in differential amplifier circuits and current mirror circuits.

  • Transistor

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N-channel MOS-FET (with gate protection diode)

Developing a range of high current products for small PKG (SC-59) Nch MOS-FET!

We have newly added products that can be used with high current to our lineup of small PKG (SC-59) N-channel MOS-FETs, which have not been available from our company until now.

  • Transistor

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N-channel MOSFET

Developing a lineup of high current small PKG (SC-59) Nch MOS-FET products!

We have newly added products that can be used with high current to our lineup of small PKG (SC-59) N-channel MOS-FETs, which have not been available from our company until now.

  • Transistor

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Built-in 2-channel comparator with reference voltage "RT8H222C"

Ideal for temperature detection and overvoltage detection with a 2-channel hysteresis comparator!

The "RT8H222C" is equipped with two comparators and an internal power supply, allowing for the detection of two voltage systems simultaneously, including temperature and overvoltage detection. It has two built-in comparators with different thresholds, and measures have been implemented to prevent voltage chattering and temperature-induced fluctuations. Additionally, it includes a power supply voltage clamp circuit, which allows for use in cases where voltages exceeding the absolute maximum ratings are needed by applying current!

  • ASIC

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Three-phase bridgeless active filter

Customers using the harmonic suppression device (active filter), we have good news!

This product is a so-called PFC circuit (power factor correction circuit). However, our company has changed the circuit configuration from the conventional single-chip active filter method using a diode bridge to a bridge-less active filter method, achieving a power factor of 0.99 or higher, an efficiency of over 96%, and compliance with harmonic regulation (clearing JIS C 61000-3-2). By using this product, a harmonic suppression device will no longer be necessary, so there will be no issues with installation costs or space! Additionally, it is an ideal product for power supply systems that require high power factor and high efficiency. The AC200V input specification is available for sample lending, and the AC400V input specification is also nearing completion for samples. We encourage interested customers to evaluate it! Furthermore, we can also accommodate custom specifications based on this product! Please feel free to contact us through our website.

  • power supply

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Digital Control Gate Driver 'VLB527-01R'

Isahaya Electronics' first! The digital control gate driver has been completed!

This product has been developed to achieve high efficiency and low noise. Since the output voltage can be controlled in multiple stepped stages, it enables the IGBT to operate with a gate waveform that has lower loss and noise. By connecting this product to a PC with a dedicated cable, the gate waveform can be adjusted to optimal waveform parameters according to the customer's usage environment, which is a key feature of this product. We are currently supporting ES, so if you are interested, please consider evaluating it. The target IGBT module class is specified as up to 3300V and 1800A, but evaluations are also possible for low-voltage and low-capacity types. With digital control for waveform adjustment, it is possible to achieve complex waveforms that could not be realized with conventional gate resistors alone! Why not stand out from your competitors with your own unique waveform? Feel free to contact us through our website!

  • power supply

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MOSFET with built-in Zener diode (for driving varistor-integrated relays)

Optimal for driving high inductance relays! Built-in Zener MOSFET has further evolved.

To support relay drive with high inductance that incorporates a barista, we have significantly enhanced the area and voltage resistance of the Zener diode section of the Zener-integrated MOSFET. This has achieved excellent breakdown tolerance, allowing it to withstand transient high voltages. It can be used with greater confidence in high-load applications where reliability is required.

  • Transistor

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Window Comparator "RT8H141/151C"

Optimal for integrated monitoring of voltage drop and overvoltage, as well as sensor signal processing.

This product consists of a window comparator circuit. This circuit has the function of determining whether the signal input to the VS terminal is within the window voltage range. It is recommended for those who want to simultaneously monitor whether the signal has dropped below that voltage range or if an overvoltage above that range has occurred. The window voltage range can be set externally, with the lower limit adjustable by applying to the VIN1 terminal and the upper limit adjustable by applying to the VIN2 terminal. The output is an open collector output, allowing for level shifting using any power supply.

  • ASIC

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Leakage current detection IC "RT8H064C"

Leak detection functionality realized in a compact package! Miniaturization of the set is possible!

This product is an IC developed for leakage detection circuits for leakage protection, which connects a ZCT to the input terminal and detects the current generated through the ZCT when a leakage occurs. It achieves leakage detection functionality in a compact package, contributing to the miniaturization of the set. It is possible to set the operating time based on the capacitance value connected to the external connection terminal. Additionally, the output format adopts a latch output, which retains the abnormal output once a leakage is detected.

  • ASIC

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Pair transistor

Guarantee the pairing of hFE and VBE for Tr1 and Tr2!

It guarantees the pairing of hFE1 and VBE, making it suitable for application in differential amplifier circuits. Additionally, it complies with AEC-Q101. It features high voltage resistance and low output capacitance, making it ideal for audio equipment.

  • Transistor

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Overcurrent and overvoltage detection IC "RT8H040C"

Ideal for preventing degradation or destruction of ICs and components from overcurrent during load short circuits and overvoltage due to abnormalities in surrounding devices!

The "RT8H040C" is an IC that detects two abnormal conditions: overcurrent and overvoltage on the load and GND lines. The overcurrent detection function monitors the voltage value of a current sensing resistor connected to GND to detect overcurrent conditions. The overvoltage detection function divides the voltage of the target being detected through a resistor divider and monitors that voltage value. Both the overcurrent and overvoltage detection functions are equipped with hysteresis in their detection sections, ensuring robust measures against false detection. The output is an OR output of the overcurrent detection signal and the overvoltage detection signal, which outputs a signal (Low) to indicate an abnormal condition if either one is detected. Additionally, the output format is open collector, allowing for input to different power systems (level shifting). The detection values for overcurrent and overvoltage can be set using resistors connected externally to the IC, allowing for flexible configuration according to the customer's circuit conditions.

  • ASIC

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Leakage current detection IC "RT8H044K"

Leakage detection IC with a built-in abnormal voltage detection function and a 1.5-wave, 3-pulse counting method!!

This product is an IC developed for leakage detection circuits for leakage protection, which connects a ZCT to the input terminal and detects the current generated through the ZCT when a leakage occurs. It uses a 1.5-wave 3-phase counting method, making it resistant to noise and optimal for leakage circuit breakers. It also has a built-in abnormal voltage detection function, allowing it to be used for neutral line phase loss protection. This abnormal voltage detection function can be disabled by connecting the PSAV terminal to GND. Additionally, the output format employs intermittent output, preventing damage to the trip coil in case of incorrect connections.

  • ASIC

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Heterojunction composite transistor (MOSFET)

Zener diode combined with a transistor or MOSFET!

Due to the built-in dual-element type, the set is not only compact but also offers versatility in usage methods such as voltage detection and protection, providing a rich lineup.

  • Transistor

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1A built-in NPN transistor

Built-in resistance allows for miniaturization of the set and reduction of component count due to the compact surface mount design!

The latch current is large, with a collector current of 1.0A, making it optimal as a driver. The built-in type with a Zener diode has a Zener diode integrated between the collector and base, preventing the transistor itself from being destroyed by back electromotive force during solenoid drives such as motors and relays.

  • Transistor

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Current driver IC "RT8H144C"

Output current values can be adjusted according to the duty ratio of the pulse input signal!!

This product outputs current according to the duty of the pulse input signal from an external source. The base current value (the current value at 100% duty) can be arbitrarily set by the external resistor connected. Additionally, it can also be used as a signal converter to transform the duty signal into an analog signal. If the analog ports of the microcontroller you are using are insufficient, it is possible to generate an analog signal using this product along with a digital port.

  • ASIC

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LED driver IC with built-in open short detection function 'RT8H174E'

LED driver with adjustable light output now features additional protection functions, including open and short circuit detection!

This product enables dimming by adjusting the duty cycle of the rectangular wave input to the dimming terminal (DIM) and allows for free setting of the LED current through an external electrical setting resistor. By adjusting the off time with an external resistor and capacitor connected to the CT terminal, energy can be recovered through an externally connected inductor, thereby saving power consumption. As a safety feature, it is equipped with a function that detects when the LED connection is open or shorted to the power supply and outputs an abnormal signal. Additionally, it has a UVLO function to prevent malfunction below 4V and also includes an overheating protection circuit.

  • ASIC

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High voltage resistance VCEO=400V PNP transistor

Our top-class high-voltage products also feature high surge tolerance.

This is a lead-type PNP transistor with a maximum rating of VCEO=400V and IC=200mA. This maximum rating of VCEO is among the top class in our company, and it has higher current capability and surge tolerance compared to products in the same voltage class. In particular, the surge tolerance can withstand surge voltages more than four times that of the maximum in the same voltage class at the weakest terminal.

  • Transistor

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Timer latch function built-in overcurrent detection IC 'RT8H030C'

It is optimal for detecting overcurrent between the load device and GND, preventing degradation or destruction of ICs and components from overcurrent due to load short circuits, etc.!

This product monitors overcurrent by inserting a current detection resistor between the load device and GND, and it outputs a signal (High signal) to indicate an abnormal condition when overcurrent is detected. It has a built-in timer circuit, allowing the detection time to be set using an external resistor and capacitor for the time constant. The product includes an RS latch circuit, which continues to output an abnormality signal regardless of the presence of overcurrent after detecting overcurrent beyond the timer duration. To reset the latch, it is necessary to either reapply power or input a reset signal to the product, ensuring safe resumption of operation. As it is a low-side overcurrent detection type, the IC can operate with a separate power supply from the load. Therefore, it is also capable of detecting overcurrent for loads powered by high-voltage supplies.

  • ASIC

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Active clamp type MOSFET

Optimal for driving inductive loads. Freewheeling diodes can be reduced!

It has a built-in Zener diode for active clamp between the gate and drain, which protects the MOSFET from back electromotive force during motor and solenoid drive operations through active clamp operation. This eliminates the need for a freewheeling diode for regenerative back electromotive force. Additionally, it also has a built-in bias resistor, contributing to the reduction of peripheral components.

  • Transistor

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Active clamp type transistor

Optimal for driving inductive loads. Freewheeling diodes can be reduced!

A Zener diode is connected (built-in) between the collector and base of the transistor with a resistor, protecting the transistor from back electromotive force during motor and solenoid drive operations through active clamp operation. Additionally, because it has a built-in resistor, it allows for direct input from microcontrollers, and its compact surface-mount design contributes to the miniaturization of the set and a significant reduction in the number of components. Furthermore, with a rated current of 1.0A, it is also ideal for use as a driver.

  • Transistor

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High Voltage N-Channel MOSFET 'INK013EAP1'

Optimal for switching power supply circuit!

INK013EAP1 is an N-channel MOSFET in a SOT-89 package with a maximum rating of VDSS=500V and ID=0.5A. This maximum rating of VDSS is top-class in our company, making it an ideal component for the startup circuit that supplies driving power to control ICs in switching power supplies.

  • Transistor

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High Current MOSFET: SC-74 Package

Considering a high current product using small PKG (SC-74) MOSFET!

We have newly added products to our small PKG (SC-74) MOS-FET lineup that can be used for high current applications. This product has an increased allowable loss compared to SC-59, resulting in an improvement of approximately 10% in the maximum rated drain current, making it possible to achieve high current within the same mounting area.

  • Transistor

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Window-type reset IC 'RT8H232C'

A new product that can perform both voltage drop detection and overvoltage detection in one device!! Fail-safe functionality can be enhanced!!

This product can detect both voltage rise and fall with just one unit, enhancing the voltage monitoring function. Standard reset ICs typically only monitor one side (either overvoltage or undervoltage) and are referred to as single-type, but this product allows for monitoring on both sides, enabling it to perform two roles with a single unit. This product has two built-in comparators, each detecting voltage rise and fall. The comparators are designed with hysteresis to prevent malfunction due to chatter. Additionally, the outputs of the comparators are independent, allowing for individual output retrieval. However, since the output format is open collector, it can also be used as a wired OR through external connections.

  • Dedicated IC

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Low voltage driven MOSFET

Expanding the lineup of low-voltage drive MOSFETs!

In mobile devices such as mobile phones, it is necessary to reduce circuit losses in order to decrease power consumption and extend operating time, which has led to a demand for low-voltage driven MOSFETs. As our first initiative, we are expanding our offerings for 1.8V and 1.5V driven products through optimization of the wafer process, and we plan to develop 1.2V in the second phase and 0.9V in the third phase.

  • Transistor

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SOT-89 package high current MOSFET

A lineup of small PKG (SOT-89) MOS-FET high current products!

We have newly added products to our small PKG (SOT-89) MOS-FET lineup that can be used with high currents, which have not been available until now. For the developed products, please check the specifications, quick reference tables, and compatibility tables. Additionally, in the compatibility table, we have picked up equivalent products due to the EOL of RE company's products, so please refer to it.

  • Transistor

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LED driver IC 'RT8H164C'

LED driver capable of setting light intensity with short waveform input signals!

The "RT8H164C" is a 1-channel step-down LED driver. Dimming is possible by inputting a short waveform to the dimming terminal (DIM) and adjusting its duty cycle, and the LED current can be freely set using an external current setting resistor. Another significant feature is the ability to regenerate energy through an externally connected inductor, which helps save power consumption. Additionally, it is equipped with a UVLO (Under Voltage Lock Out) function that stops operation when a drop in power supply voltage is detected, as well as an overheat protection function that stops operation when a certain temperature is exceeded.

  • Dedicated IC

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SiC Schottky Barrier Diode "ICS Series"

Contributes to the high efficiency of power supplies through high current, high voltage characteristics, and fast recovery characteristics of SiC.

Our ICS series consists of Schottky barrier diodes made from SiC. By using SiC as the material, we achieve high current and high voltage characteristics that were not possible with silicon, while also maintaining the fast recovery characteristics of Schottky barrier diodes. By using them in power supply circuits for PFC (power factor correction circuits) and as freewheeling diodes in inverter circuits, we contribute to improving power supply efficiency and reducing excess power consumption during switching. Compared to fast recovery diodes known for their high-speed recovery characteristics, our products have achieved a 33.6% increase in efficiency and a 48.2% reduction in losses. Additionally, beyond improving power supply efficiency, our SiC Schottky barrier diodes offer advantages such as operation in high-temperature environments exceeding silicon and longer lifespan, so we encourage you to try our SiC Schottky barrier diodes.

  • diode

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What is MFT?

A mini custom IC that has functionality through a combination of transistors, resistors, capacitors, etc.!

The "MFT" is a mini custom IC that is constructed using a combination of transistors, resistors, capacitors, and other components to provide functionality in a circuit. A core chip with pre-arranged transistors, resistors, capacitors, etc., is prepared in advance, and the circuit design and aluminum wiring are applied according to the customer's specifications to complete the chip. After that, the product is assembled and finished to meet the customer's specifications. The "MFT" allows for the completion of the product chip with only changes in the aluminum wiring process, resulting in significant reductions in wafer processing time and cost savings on auxiliary materials such as photomasks compared to full custom ICs, making it possible to commercialize products at a lower cost. Additionally, by consolidating components, it enables a reduction in the number of parts in the customer's set, contributing to a decrease in the product's circuit board area. This product is ideal for customers who find it challenging to realize custom ICs.

  • Dedicated IC

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Electrostatic protection diode "INT Series"

Compliant with IEC61000-4-2. Optimal for electrostatic protection for high-speed transmission!

The electrostatic discharge protection diode is a component that protects internal circuits from surge voltages and plays an important role in improving system reliability. It is a type of Zener diode that can suppress surge voltages to a certain level, thereby reducing peak voltage. When a large voltage, such as electrostatic discharge, is applied, the TVS breaks down and allows a large current to flow to the ground side. This absorbs the energy of the surge voltage, ensuring that no voltage exceeding the breakdown voltage of the TVS is applied to the subsequent circuits. Our company is the only manufacturer in Japan producing the lead-insertion type TO-92S, offering a lineup from standard capacity types to high-speed transmission electrostatic protection with low capacitance between the anode and cathode. We are also gradually expanding our product line to include AEC-Q101 compliant products, so we kindly ask you to consider our products.

  • diode

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High-frequency transistor

Introduction of high-frequency transistors (fT = 1.1 to 8 GHz) lineup!

We would like to introduce our mass-produced high-frequency transistors. This product is manufactured using a silicon high-frequency process, featuring a high gain-bandwidth product (fT), making it ideal for high-frequency amplification applications such as oscillation circuits for tuners and keyless entry systems, as well as amplification circuits for image sensors. We offer a lineup with fT values of 1.1GHz, 4.5GHz, and 8GHz, and they come in compact packages such as SC-59, SC-70, and SC-75A, allowing for miniaturization of sets and high-density mounting. Additionally, many high-frequency transistors from other domestic manufacturers have reached EOL (end of life), but we continue to produce them. If you are facing issues with EOL products from other companies, we encourage you to consider our offerings at this opportunity.

  • Transistor

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General-purpose MOSFET

Introduction of general-purpose MOSFET lineup (VDSS = ~60V, ID = ~0.7A)!

Introducing our general-purpose MOSFET. This product can be used for various applications due to its general-purpose nature. Target applications include LED driving, motor driving, lithium-ion charging control, DC-DC converters, and load switches, among others. The product specifications include a maximum VDSS of 60V, a maximum ID of 0.7A, and a threshold voltage ranging from 0.5 to 2.0V, making it a versatile general-purpose MOSFET with various characteristics. Additionally, we offer ultra-compact packages such as SC-75A, SC-70, and SC-59, making it suitable for new adoptions as well as alternatives for EOL products from other companies. Some products are also compatible with automotive applications, so please refer to the brochure for details or contact our sales team for inquiries.

  • Transistor

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Power Supply Voltage Monitoring IC 'RT8H182E'

Monitor voltage drop in the 2 systems! Additional overvoltage monitoring circuit can also be added!

RT8H182E is a power supply voltage monitoring IC that detects power supply voltage interruptions or drops and generates a reset signal (L output). It can monitor two power supply systems, including the power supply voltage. The monitoring voltage for the power supply voltage can be changed by external resistors. The detection voltage for the other power supply voltage can be adjusted using a resistor divider. It is also possible to set the delay time for reset release using an external capacitor. Additionally, this product has one built-in comparator. Since this comparator has an open-collector output, level shifting using any power supply is possible. By inputting the power supply voltage using a resistor divider, it can also be used for overvoltage detection. By connecting the reset output terminal to the input terminal of this comparator, it can also be used for logical inversion of the reset output.

  • ASIC

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2ch window comparator "RT8H171E"

Ideal for bulk voltage monitoring and sensor signal processing with a 2ch window comparator!

This product incorporates two window comparator circuits. It outputs high (H) when the input signal (VS) is within the range of two reference voltages (VIN1 & VIN2) that can be determined externally. The output of each comparator is an open collector output, allowing for level shifting using any power supply. With this single product, you can monitor two systems for voltage drop and overvoltage simultaneously, as well as process sensor signals. Additionally, compared to the RT8H151C, which has one built-in window comparator circuit, this product has a wider power supply voltage range, making it usable even when the power supply voltage is high (17V to 36V).

  • ASIC

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Overvoltage detection IC with built-in timer latch function 'RT8H060/070C'

Ideal for preventing degradation and destruction of ICs and components due to overvoltage caused by peripheral device abnormalities!

The RT8H060C and RT8H070C are ICs that detect overvoltage on power and signal lines. They monitor overvoltage by inputting a signal from a voltage divider of the power and load lines into the IC. When overvoltage is detected, they output a signal to indicate an abnormal condition. Since they have a built-in timer circuit, it is possible to prevent false detection from transient voltage spikes. The output format adopts a latch type, meaning that once overvoltage is detected, the signal indicating an abnormal condition continues to be output even after the overvoltage state is cleared. To reset the abnormal detection state, it is necessary to either recycle the power or input a reset signal to the product, allowing for safe resumption of operation. The voltage value for detecting overvoltage and the timer duration can be set externally for this product, allowing for flexible configuration according to the customer's circuit conditions.

  • ASIC
  • Dedicated IC
  • Other semiconductors

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Overcurrent and Overvoltage Detection IC "RT8H020C"

Ideal for preventing degradation or destruction of ICs and components from overcurrent during load short circuits and overvoltage due to abnormalities in surrounding devices!

The 『RT8H020C』 is an IC that detects two abnormal conditions: overcurrent and overvoltage on the power and load lines. The overcurrent detection function monitors the voltage across a current sensing resistor connected externally to the IC, allowing it to detect overcurrent conditions. The detection circuit includes hysteresis to prevent false detection. The overvoltage detection function monitors the voltage of the target by using a resistor divider to scale down the voltage. The output is an OR output of the overcurrent detection signal and the overvoltage detection signal, which means that if either abnormal condition is detected, it will output a signal (Low) to indicate the abnormality. Additionally, the output format is open collector, allowing for input to different power systems (level shifting). The detection values for overcurrent and overvoltage can be set using resistors connected externally to the IC, allowing for flexible configuration according to the customer's circuit conditions.

  • ASIC
  • Dedicated IC
  • Other semiconductors

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Timer latch function built-in overcurrent detection IC 'RT8H010C'

Ideal for preventing degradation or destruction of ICs and components from overcurrent such as load short circuits!

The "RT8H010C" is an IC that detects overcurrent in power and load lines. By inserting a current sensing resistor in the power and load lines, it monitors overcurrent based on the voltage difference across the resistor. When overcurrent is detected, it outputs a signal (High signal) to indicate an abnormal condition. It has a built-in timer circuit, which prevents false detection of inrush currents during power-up. The output format adopts a latch type, meaning that once overcurrent is detected, it will continue to output the abnormal signal even if the overcurrent condition is removed. To clear the abnormal detection state, it is necessary to either reset the power or input a reset signal to the product, allowing for a safe resumption of operation. The current value for detecting overcurrent and the timer duration can be set externally, allowing for flexible configuration according to the customer's circuit conditions.

  • ASIC
  • Dedicated IC
  • Other semiconductors

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High voltage input (up to 1500V) DC-DC converter

Maximum input voltage DC1500V! Supports a wide input range of DC800 to 1500V!

This is a DC-DC converter that supports a maximum input of 1500V. We have prepared two types of products for evaluation samples: a 24V/200W output type and a 280V/200W output type. The evaluation samples are available for loan. 24V output type: VLA350-24200 280V output type: VLA349-280200 【Features】 ■ Wide input range of DC800 to 1500V ■ High insulation of 4.4kV between input and output ■ Reduced losses through input multiplexing configuration ■ Built-in output overcurrent protection function ■ Built-in output overvoltage protection function ■ Customizable options available Customization is possible to meet customer requirements, such as changing the number of units or connection configurations, and considerations for higher capacity versions are also possible! *For more details, please refer to the PDF document or feel free to contact us.

  • converter
  • Switching Power Supply
  • power supply

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Custom power supply / Custom inverter

With Isahaya Electronics' power supply technology, we will propose the optimal power supply for our customers!

Do you have any of the following concerns? ■ Standard power supplies are over-spec and inventory management is difficult ■ Unable to complete the development of high-performance power supplies in-house ■ Want to enhance product value with inverter and power supply technology ■ Cannot find products within the desired input voltage range ■ Want to allocate power supply development resources to core technologies ■ Want to achieve high-performance operation linked with peripheral circuits We can solve these issues with Isahaya Electronics' custom power supplies and custom inverters! Based on your requests, we will propose the optimal power supply for you using our power supply technology. Feel free to contact us!

  • Switching Power Supply

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Gate Drive Unit "VLB512/VLB519-01R"

Coordinating with the RTC signals output from the module itself, achieving short-circuit protection functionality!

The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.

  • Power Supplies

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Gate Drive Unit "GAU220P-15402"

Supports parallel operation of 1700V/1200A class IGBT modules!

The "GAU220P-15402" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/1800A class. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. Additionally, it features a built-in isolated DC-DC converter for gate driving, with a maximum gate output peak current of ±20A. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±20A ■ Isolation withstand voltage of 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

  • Power Supplies

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Gate Drive Unit "GAU240P-15405"

Supports 4 parallel drive for 1700V/1200A class IGBT modules!

The "GAU240P-15405" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/3600A class. It has a built-in isolated DC-DC converter for gate driving. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±40A ■ Isolation withstand voltage 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

  • Power Supplies

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