SiSi Wafer Solution
Small leaks, high quality, small warps, and low defect density! Offered as a cost-effective material.
We provide customers manufacturing semiconductor devices with Silicon-Silicon bonded wafers as a cost-effective alternative to traditional materials such as thick epitaxial and inverted epitaxial wafers, which have been conventionally used for power devices and PiN diodes. By using direct wafer bonding technology, it is possible to create silicon substrates that include various single crystal silicon types. The resistance range of these materials is from 1 mΩ-cm to 10 kΩ-cm. 【Features】 ■ Orientation direction can be arranged with N-type or P-type materials ■ Low leakage, high quality, minimal warping, and low defect density ■ Variation in layer thickness can be kept to +/-0.5 μm or less ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly according to customer applications *For more details, please refer to the PDF document or feel free to contact us.
- Company：アイスモス・テクノロジー・ジャパン
- Price：Other
