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microscope Product List and Ranking from 178 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Mar 25, 2026～Apr 21, 2026
This ranking is based on the number of page views on our site.

microscope Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Mar 25, 2026～Apr 21, 2026
This ranking is based on the number of page views on our site.

  1. null/null
  2. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  3. アイテス Shiga//Electronic Components and Semiconductors
  4. 4 サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  5. 5 アズサイエンス 松本本社 Nagano//Trading company/Wholesale
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microscope Product ranking

Last Updated： Aggregation Period:Mar 25, 2026～Apr 21, 2026
This ranking is based on the number of page views on our site.

  1. All-in-one fluorescence microscope 'BZ-X1000 Series'
  2. White interference microscope equipped with laser 'VK-X4000 series'
  3. White interference microscope equipped with laser microscope 'VK-X3000'
  4. 4 All-in-one fluorescence microscope 'BZ-X800'
  5. 5 All-in-one fluorescence microscope BZ-X series

microscope Product List

421～450 item / All 677 items

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[SSRM] Scanning Spreading Resistance Microscopy

[SSRM] Scanning Spreading Resistance Microscopy

Local resistance measurement at the nanometer level is possible.

SSRM is a method that visualizes the spreading resistance directly beneath the probe by scanning the surface of a sample with applied bias using a conductive probe and measuring the distribution of resistance values in two dimensions. When measuring silicon semiconductor devices, it is sensitive to carrier concentrations of 10^16 cm^-3 or higher, depending on spatial resolution. - Local resistance measurement at the nanometer level is possible - Effective for measuring the dopant concentration distribution in semiconductors - Cannot determine the polarity of semiconductors (p-type/n-type) - Quantitative evaluation is not possible

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[Analysis Case] Observation of the Buffer Layer Interface in CIGS Thin-Film Solar Cells

[Analysis Case] Observation of the Buffer Layer Interface in CIGS Thin-Film Solar Cells

Crystal structure evaluation of the Zn(S, O, OH)/CIGS junction interface using ultra-high resolution STEM.

By directly observing the junction interface using a Cs collector-equipped STEM device, it is possible to evaluate the crystal structure at the atomic level. In this study, we conducted HAADF-STEM imaging of the buffer layer/CIGS interface using Zn(S, O, OH) in the buffer layer of CIGS thin-film solar cells and evaluated the structure. As a result, it was suggested that the crystal structure at the junction is unclear compared to samples using CdS as the buffer layer, indicating that it is not an epitaxial junction.

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[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

Lattice image analysis using the FFTM method

The Fast Fourier Transform Mapping method is a technique that performs a Fourier transform on high-resolution TEM images to analyze and visualize the minute lattice distortions of crystals from the spot positions of the FFT pattern. Through FFTM analysis, it is possible to (1) analyze lattice distortions in the x and y directions of the image, (2) analyze lattice distortions in the crystal plane direction, (3) analyze the distribution of crystal plane spacing and crystal plane orientation, (4) display the data distribution as a histogram, and (5) detect distortions of 0.5% with a spatial resolution of 5 nm. An example of its application to compound heterojunction multilayer film samples is presented.

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[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

Identification of failure locations using an emission microscope with a high voltage power supply.

By overlaying the luminescent image and the IR image, it is possible to identify leak locations under microscopic observation. If there are large-scale appearance anomalies such as cracks or electrostatic breakdown, abnormalities can also be confirmed with an IR microscope. Additionally, if luminescence cannot be detected due to light shielding of the emitter electrode, the collector electrode is removed, and near-infrared light is detected from the collector side. An example is presented where a high-voltage power supply capable of applying up to 2000V is used to operate a power device with high voltage resistance and low leakage current, and the failure location is identified using an emission microscope.

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[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

Electron beam induced current method and crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are expected to be low-cost next-generation solar cells. Development is underway for large-area and high-quality production. To evaluate the characteristics of the polycrystalline thin film, we conducted assessments of the pn junction using EBIC and crystal grain evaluation using EBSD on the same cross-section. We prepared a cross-section of the CIGS film and measured the open-circuit voltage (EBIC) by scanning an electron beam, visualizing the in-plane distribution of the open-circuit voltage. Additionally, by measuring EBSD on the same surface, we correlated the distribution of the open-circuit voltage with the crystal grains.

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[Analysis Case] Evaluation of Crystal Grains in CIGS Film

[Analysis Case] Evaluation of Crystal Grains in CIGS Film

Crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are being developed as next-generation solar cells expected to achieve low cost, large area, and high quality, and crystal information is required in this process. The EBSD method allows for the evaluation of crystal grains in CIGS films. The crystal information obtained from the EBSD method mainly includes orientation and grain size.

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[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

Planar TEM observation of specific areas using the FIB method.

By using FIB technology that allows for processing at the nanoscale, it is possible to perform planar TEM observations of specific areas. This enables the confirmation of the ONO three-layer structure (silicon oxide film / silicon nitride film / silicon oxide film) of the capacitor insulating film on the sidewall of the hole, which is difficult to verify through cross-sectional observations.

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Spherical aberration correction function

Spherical aberration correction function

TEM: Transmission Electron Microscopy

In a STEM device equipped with a spherical aberration correction function (Cs corrector), high-resolution observation and high-sensitivity analysis at the atomic level are possible. The resolution is approximately 0.10 nm.

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[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

Observation of cross-sectional structure of liquid samples using cryo-SEM.

When evaluating the particle size and structure of fine particles dispersed in a liquid, conventional methods involved drying the liquid to extract the fine particles as a powder, which were then measured using an electron microscope. However, this method was not suitable for investigating how fine particles are actually dispersed in the liquid used. Therefore, we will introduce a case where cryo-processing and SEM observation were performed to directly evaluate how fine particles are dispersed within a liquid sample.

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[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

Capable of nano-order morphological observation and elemental analysis.

Transmission electron microscopy (TEM) allows for morphological observation and elemental analysis on the order of μm to nm. Since eyeshadows are aggregates of solid particles, we conducted the analysis directly using TEM. After TEM observation, we performed EDX analysis on specific areas within the field of view to estimate the materials based on the constituent elements. Furthermore, it is possible to distinguish crystal types through EELS analysis.

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[Analysis Case] Structural Evaluation of Fine Transistors

[Analysis Case] Structural Evaluation of Fine Transistors

High-resolution TEM observation using Cs-corrected TEM

By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.

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[Analysis Case] Morphological Observation and Component Analysis of Solid Polymer Fuel Cell Catalyst Materials

[Analysis Case] Morphological Observation and Component Analysis of Solid Polymer Fuel Cell Catalyst Materials

Evaluation of catalyst particles using SEM, STEM, and EDX.

The electrodes of fuel cells are supported by Pt particles or Pt alloy (such as PtRu) particles on carbon. Due to the fine structure of these catalyst particles, which are on the order of a few nanometers, SEM and TEM analyses are used for morphological observation and compositional analysis. In addition to evaluations in the initial state, degradation after current application has been reported, including modulation of alloy composition, Ru leaching, and an increase in catalyst particle size; high spatial resolution HAADF observation and EDX analysis are very effective for these evaluations. Furthermore, SEM observation allows for the confirmation of the shape of the carbon support and the state of the catalyst particles.

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[Analysis Case] Observation of Hair Surface Microstructure by AFM

[Analysis Case] Observation of Hair Surface Microstructure by AFM

Quantitative evaluation with reduced alteration is possible through analysis in the atmosphere.

This case study introduces an analysis of the condition of the cuticle on the hair surface using AFM. AFM is a method for three-dimensional measurement of nanoscale surface roughness. Since the analysis is conducted in the atmosphere, it does not cause degradation or gas release of organic materials, allowing for an evaluation of the sample's original shape. In this case study, we assessed the degree of cuticle opening, the distribution of adhered substances, and the roughness evaluation of different areas through images, as well as quantitatively evaluated the surface roughness through numerical processing. This method is effective for evaluating the condition of hair after shampooing and the application state after applying styling products.

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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

High-resolution TEM observation of crystal defects detected by PL mapping.

In PL (photoluminescence) mapping, it is possible to identify the positions of crystal defects from the luminescent areas. Furthermore, by performing high-resolution STEM observation (HAADF-STEM images) at the same locations, we can capture stacking defects. In this case study, we investigated commercially available SiC power devices using PL mapping and STEM. After identifying the positions of stacking defects through PL mapping, we conducted μ-sampling at the defect edge and performed cross-sectional STEM observation.

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[Analysis Case] Evaluation of Diffusion Layer Shape of Image Sensors Using SCM

[Analysis Case] Evaluation of Diffusion Layer Shape of Image Sensors Using SCM

We provide consistent support from sample disassembly to measurement.

This document presents case studies evaluating the diffusion layer of image sensors in smartphones. Using a scanning capacitance microscope (SCM) capable of determining the p/n type of semiconductors, we assessed the distribution of the diffusion layer. By combining the results from cross-sectional and planar SCM, we obtained complementary and extensive information. SCM is one of the effective tools for evaluating the quality of image sensor diffusion layers and for failure analysis.

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AFM Data Collection

AFM Data Collection

AFM: Atomic Force Microscopy Method

AFM is a method that scans the surface of a sample with a fine probe and measures nano-scale surface topography in three dimensions. It can measure a wide range of materials, not only for the evaluation of metals, semiconductors, and oxides, but also for soft materials such as hair and contact lenses. This document presents various AFM images of different materials.

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[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls

[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls

Quantitative evaluation of the roughness of trench sidewalls related to device characteristics.

In recent years, SiC has been attracting attention as a material for high-voltage devices. The trench MOSFET structure is necessary for the high integration of devices, and the application development for SiC devices is progressing. Since the channel region of the trench MOSFET structure is the trench sidewall, the flatness of the trench sidewall is related to the reliability of the device. This document introduces an example of quantitatively evaluating the roughness of the trench sidewall of SiC trench MOSFETs using AFM (Atomic Force Microscopy).

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[Analysis Case] STEM/EDX and Image Simulation for Crystal Structure Evaluation

[Analysis Case] STEM/EDX and Image Simulation for Crystal Structure Evaluation

The evaluation of the crystal structure can be performed based on the STEM images and the results of atomic composition measurements.

By measuring the sample, it is possible to evaluate the crystal structure through the combination of results obtained and simulations. This document introduces a case study in which the crystal structure is discussed by comparing the results obtained from HAADF-STEM and EDX measurements on polycrystalline neodymium magnets with simulated images using the respective measurement conditions. The combination of measurement results and computational simulation results allows for a deeper understanding of the crystal structure.

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[Analysis Case] SiC by SMM and SNDM

[Analysis Case] SiC by SMM and SNDM

You can evaluate the p/n polarity and carrier concentration distribution of the diffusion layer in SiC devices.

In recent years, SiC has attracted attention as a material for high-voltage devices. The trench MOSFET structure allows for high integration of the elements, and applications for SiC devices are also being advanced. On the other hand, there are challenges regarding the dopant activation rate of SiC devices, making performance evaluation important. In this instance, we will introduce a case where carrier polarity determination was conducted using SNDM (Scanning Nonlinear Dielectric Microscopy) and carrier concentration distribution was evaluated using SMM (Scanning Microwave Microscopy) for SiC trench MOSFETs.

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[Analysis Case] Structural Analysis of DRAM Chips using TEM and SEM

[Analysis Case] Structural Analysis of DRAM Chips using TEM and SEM

Reverse engineering of DRAM on the product's internal substrate.

We will conduct a comprehensive analysis of DRAM, a representative memory, from product level to device microstructure analysis through TEM observation. By performing appearance observation, layer analysis, and Slice & View, we will grasp the overall structure, control the FIB processing position at the nanoscale, and observe the microstructure of the memory section through TEM imaging after thin section formation.

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[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

It is possible to obtain insights into the size and distribution of crystal grains in metallic polycrystals.

The Scanning Ion Microscope (SIM) is a method that irradiates a solid sample with an ion beam and detects the secondary electrons generated. Since secondary electrons produce contrast according to the crystal orientation of each grain, it is possible to easily obtain insights into the size and distribution of crystal grains in polycrystalline metals such as Cu and Al using SIM. This document presents an example of measurements where the surface of Cu was observed using SIM.

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[MFM] Magnetic Force Microscopy Method

[MFM] Magnetic Force Microscopy Method

MFM is a measurement technique that uses a probe coated with a magnetic film to measure the leakage magnetic field occurring near the sample surface and obtain magnetic information.

- Qualitative information on the magnetic properties of the sample can be obtained. - Imaging of attraction and repulsion due to leakage magnetic fields is possible. - A signal of magnetic force proportional to the magnitude of the gradient of the leakage magnetic field can be obtained, but quantitative evaluation is not possible. - AFM images can also be obtained simultaneously.

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[Analysis Case] Evaluation of Skin Permeability Using Three-Dimensional Cultured Human Skin

[Analysis Case] Evaluation of Skin Permeability Using Three-Dimensional Cultured Human Skin

It is possible to conduct various evaluations of cultured human skin (morphological observation, distribution assessment of components, quantitative analysis).

■Morphological Observation The morphology of the tissue can be confirmed by staining frozen sections (e.g., HE staining, Nile blue staining). ■Fluorescence Microscopy Observation If the transmitted components have fluorescence, the fluorescent components can also be observed using a fluorescence microscope. ■Mass Microscopy Observation The distribution of components can be evaluated. Temporal changes can also be confirmed with sections taken at different times (TOF-SIMS). ■Quantitative Analysis Temporal changes in the amount of fluorescent components in the skin can also be confirmed (e.g., LC/MS/MS, fluorescence detectors, etc.).

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[Analysis Case] Evaluation of Mechanical Properties of Food (Roast Ham) by AFM-MA

[Analysis Case] Evaluation of Mechanical Properties of Food (Roast Ham) by AFM-MA

Quantifying texture with mechanical property parameters.

Factors that determine texture include various elements such as hardness and adhesion. Generally, the texture of food is evaluated through stress assessment using tools like texture analyzers, but measuring in micro-regions or thin samples is challenging. AFM-MA can measure not only the shape of surface roughness but also the Young's modulus representing mechanical properties like hardness, adhesion parameters related to texture, and energy dissipation data in micro-regions. Therefore, it is effective for evaluating physical properties related to texture and similar characteristics in extremely small areas.

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[Analysis Case] Extraction of Active Material from Battery Cathode Material and Data Analysis

[Analysis Case] Extraction of Active Material from Battery Cathode Material and Data Analysis

We determined the particle size of active substances from SEM images using deep learning and data analysis.

Deep learning enables the extraction of target objects from images. Additionally, by analyzing the regions corresponding to the obtained targets, information can be obtained in numerical form. In this instance, we used deep learning to extract active material particles and detect cracks in cross-sectional SEM images of battery cathode materials. Extraction is also possible for 3D data, such as Slice&View data. We extracted particles with and without cracks from the 3D data and calculated their respective particle sizes. Measurement methods: SEM, Slice&View, computational science, AI, data analysis Product fields: Solar cells, secondary batteries, fuel cells Analysis purposes: Structural evaluation, shape evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

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[Analysis Case] Surface Shape Analysis of GaN Substrates

[Analysis Case] Surface Shape Analysis of GaN Substrates

Visualization of step-terrace structures by AFM.

Gallium nitride (GaN), a wide bandgap semiconductor, is used in a wide range of fields such as power devices and communication/optical devices. When fabricating devices, the shape and roughness of the wafer surface significantly impact device performance. During the growth of GaN wafers, a step-terrace structure is formed on the surface due to stress effects from lattice mismatch with the supporting substrate. This document introduces a case where the step-terrace structure of the GaN substrate surface was visualized using AFM, and the terrace width, step height, surface roughness, and off-angle were evaluated. Measurement method: AFM Product fields: Power devices, electronic components, lighting Analysis purpose: Shape evaluation, structural evaluation For more details, please download the document or contact us.

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[Analysis Case] Composition Analysis of Particles on a Wafer

[Analysis Case] Composition Analysis of Particles on a Wafer

Shape observation and simple quantitative analysis using SEM-EDX.

Control of particles in the semiconductor wafer manufacturing process is extremely important for ensuring wafer quality. In this case study, we estimated what the particles were on a Si wafer through SEM observation, EDX analysis, and simple quantification. The SEM equipment, which has high spatial resolution in the submicron range and can scan areas of several centimeters, allows for rapid inference of what the particles on the wafer are based on shape and composition information, enabling quick identification of the generation process. Analysis linked to coordinate data from defect inspection equipment is also possible.

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[Analysis Case] Composite Analysis of Specific Areas within Electronic Devices (C0572)

[Analysis Case] Composite Analysis of Specific Areas within Electronic Devices (C0572)

Non-destructive assessment of specific areas inside the device! Evaluation of detailed structure and composition information of specific areas through cross-sectional observation.

Our company offers technologies suitable for structural evaluation of electronic devices, and we propose analytical methods tailored to the observation field and objectives. In a case where we investigated specific areas of a device using X-ray CT and FIB-SEM, we first used X-ray CT to observe the internal structure of the entire sample and identify specific areas. Next, we used FIB-SEM to confirm the detailed structure of the specific structures identified on the vias. 【Measurement and Processing Methods】 ■[SEM] Scanning Electron Microscopy ■[SEM-EDX] Energy Dispersive X-ray Spectroscopy (SEM) ■X-ray CT Method ■[FIB] Focused Ion Beam Processing *For more details, please download the PDF or feel free to contact us.

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[Analysis Case] SEM Observation of Wide-Area Cross-Section Using Xe-PFIB

[Analysis Case] SEM Observation of Wide-Area Cross-Section Using Xe-PFIB

Observation of cross-sections with an accuracy of several tens of nanometers and a size of several hundred micrometers is possible!

We offer wide-area cross-sectional SEM observation (C0610) using Xe-PFIB. The metal bonding that electrically connects the electrodes of integrated circuits, electrodes, printed circuit boards, and semiconductor packages has a diameter of several tens of μm to several hundred μm. With Xe-PFIB (Xe-Plasma Focused Ion Beam), we can target processing positions on the order of several tens of nm and create cross-sections of several hundred μm square, allowing for a detailed understanding of the entire view at the center of the bonding. 【Measurement and Processing Methods】 ■ [SEM] Scanning Electron Microscopy ■ X-ray CT Method ■ [FIB] Focused Ion Beam Processing *For more details, please download the PDF or feel free to contact us.

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[Analysis Case] Evaluation of Mechanical Properties of Hair Cross-Sections Prepared by Microtome Method

[Analysis Case] Evaluation of Mechanical Properties of Hair Cross-Sections Prepared by Microtome Method

It is possible to evaluate the elastic modulus of the internal structure of soft materials.

When evaluating the internal structure of materials, it is necessary to expose the internal structure while maintaining it through cross-sectional processing techniques such as cutting and polishing. This document introduces a case where the microtome method, which has a relatively small impact from processing damage, was used to create cross-sections of hair, followed by AFM observation of the internal structure and evaluation of elastic modulus. The microtome method is a cutting processing technique widely used in the field of soft materials, such as rubber materials and biological samples, and this approach has made it possible to evaluate the mechanical properties of the internal structure of these materials. [Measurement and Processing Methods] [AFM] Atomic Force Microscopy [AFM-MA・AFM-DMA] Mechanical Property Evaluation (Elastic Modulus Measurement, Dynamic Viscoelasticity Measurement) Ultra Microtome Processing *For more details, please download the PDF or feel free to contact us.

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