Last Updated： Aggregation Period:Aug 05, 2026～Sep 01, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Aug 05, 2026～Sep 01, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Aug 05, 2026～Sep 01, 2026
This ranking is based on the number of page views on our site.
421～450 item / All 670 items
![[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)](https://image.mono.ipros.com/public/product/image/ca4/2000026104/IPROS5123177058156925496.jpg?w=280&h=280)
You can understand the positional relationship between the gate layer, source layer, and body layer.
We investigated the shape and positional relationship of the poly-Si gate, n-type source layer, and p-type body layer of commercially available power transistors (DMOSFETs). By overlaying AFM images, we can also understand the positional relationship with the gate.
![[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film](https://image.mono.ipros.com/public/product/image/b10/2000026113/IPROS4490458793626991748.jpg?w=280&h=280)
Electron beam induced current method and crystal orientation analysis using SEM.
CIGS thin-film polycrystalline solar cells are expected to be low-cost next-generation solar cells. Development is underway for large-area and high-quality production. To evaluate the characteristics of the polycrystalline thin film, we conducted assessments of the pn junction using EBIC and crystal grain evaluation using EBSD on the same cross-section. We prepared a cross-section of the CIGS film and measured the open-circuit voltage (EBIC) by scanning an electron beam, visualizing the in-plane distribution of the open-circuit voltage. Additionally, by measuring EBSD on the same surface, we correlated the distribution of the open-circuit voltage with the crystal grains.
![[Analysis Case] Evaluation of Crystal Grains in CIGS Film](https://image.mono.ipros.com/public/product/image/58b/2000026115/IPROS6963503686761887998.jpg?w=280&h=280)
Crystal orientation analysis using SEM.
CIGS thin-film polycrystalline solar cells are being developed as next-generation solar cells expected to achieve low cost, large area, and high quality, and crystal information is required in this process. The EBSD method allows for the evaluation of crystal grains in CIGS films. The crystal information obtained from the EBSD method mainly includes orientation and grain size.
![[Analysis Case] Structural Observation of the Hall Side Wall ONO Film](https://image.mono.ipros.com/public/product/image/a5e/2000026142/IPROS2350369472729791420.jpg?w=280&h=280)
Planar TEM observation of specific areas using the FIB method.
By using FIB technology that allows for processing at the nanoscale, it is possible to perform planar TEM observations of specific areas. This enables the confirmation of the ONO three-layer structure (silicon oxide film / silicon nitride film / silicon oxide film) of the capacitor insulating film on the sidewall of the hole, which is difficult to verify through cross-sectional observations.
TEM: Transmission Electron Microscopy
In a STEM device equipped with a spherical aberration correction function (Cs corrector), high-resolution observation and high-sensitivity analysis at the atomic level are possible. The resolution is approximately 0.10 nm.
![[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid](https://image.mono.ipros.com/public/product/image/ac4/2000243700/IPROS676374702884338146.jpg?w=280&h=280)
Observation of cross-sectional structure of liquid samples using cryo-SEM.
When evaluating the particle size and structure of fine particles dispersed in a liquid, conventional methods involved drying the liquid to extract the fine particles as a powder, which were then measured using an electron microscope. However, this method was not suitable for investigating how fine particles are actually dispersed in the liquid used. Therefore, we will introduce a case where cryo-processing and SEM observation were performed to directly evaluate how fine particles are dispersed within a liquid sample.
![[Analysis Case] Evaluation of Lithium-ion Secondary Battery Electrode Materials](https://image.mono.ipros.com/public/product/image/a68/2000244235/IPROS863522080924549407.jpg?w=280&h=280)
Evaluation of the dispersion of various components in the positive electrode composite.
It is possible to measure the resistance of electrode materials in lithium-ion batteries using SSRM (Scanning Spreading Resistance Microscopy). In electrode composites made up of components with different resistance values, it may be possible to confirm the mixing ratio of various materials as well as the presence of electrically active and inactive active materials. Additionally, by combining shape measurements such as AFM and elemental analysis, a comprehensive evaluation can be achieved.
![[Analysis Case] Evaluation of Electrode Materials for Lithium-Ion Secondary Batteries](https://image.mono.ipros.com/public/product/image/6a7/2000245597/IPROS167736653024549107.jpg?w=280&h=280)
Cross-sectional observation using atmosphere-controlled ion polishing (IP) processing is possible.
The electrodes of lithium-ion secondary batteries are very significant constituent materials that greatly influence the performance and reliability of the battery, such as its capacity. By performing ion polishing (IP) processing on the electrode materials after charge-discharge cycle testing under controlled atmospheric conditions, we can accurately observe them while minimizing degradation due to atmospheric exposure. In this instance, we will present a case that verifies the effect of atmospheric control on the positive electrode materials of lithium-ion secondary batteries after charge-discharge cycles by comparing the results of SEM observations after IP processing.
![[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS](https://image.mono.ipros.com/public/product/image/11d/2000245824/IPROS3910876968581395502.jpg?w=280&h=280)
Capable of nano-order morphological observation and elemental analysis.
Transmission electron microscopy (TEM) allows for morphological observation and elemental analysis on the order of μm to nm. Since eyeshadows are aggregates of solid particles, we conducted the analysis directly using TEM. After TEM observation, we performed EDX analysis on specific areas within the field of view to estimate the materials based on the constituent elements. Furthermore, it is possible to distinguish crystal types through EELS analysis.
![[Analysis Case] Structural Evaluation of Fine Transistors](https://image.mono.ipros.com/public/product/image/de3/2000246133/IPROS993626043755236219.jpg?w=280&h=280)
High-resolution TEM observation using Cs-corrected TEM
By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.
![[Analysis Case] Morphological Observation and Component Analysis of Solid Polymer Fuel Cell Catalyst Materials](https://image.mono.ipros.com/public/product/image/d6e/2000246744/IPROS8205848454995937423.jpg?w=280&h=280)
Evaluation of catalyst particles using SEM, STEM, and EDX.
The electrodes of fuel cells are supported by Pt particles or Pt alloy (such as PtRu) particles on carbon. Due to the fine structure of these catalyst particles, which are on the order of a few nanometers, SEM and TEM analyses are used for morphological observation and compositional analysis. In addition to evaluations in the initial state, degradation after current application has been reported, including modulation of alloy composition, Ru leaching, and an increase in catalyst particle size; high spatial resolution HAADF observation and EDX analysis are very effective for these evaluations. Furthermore, SEM observation allows for the confirmation of the shape of the carbon support and the state of the catalyst particles.
![[Analysis Case] Observation of Hair Surface Microstructure by AFM](https://image.mono.ipros.com/public/product/image/9d4/2000322289/IPROS5644908326747639240.jpg?w=280&h=280)
Quantitative evaluation with reduced alteration is possible through analysis in the atmosphere.
This case study introduces an analysis of the condition of the cuticle on the hair surface using AFM. AFM is a method for three-dimensional measurement of nanoscale surface roughness. Since the analysis is conducted in the atmosphere, it does not cause degradation or gas release of organic materials, allowing for an evaluation of the sample's original shape. In this case study, we assessed the degree of cuticle opening, the distribution of adhered substances, and the roughness evaluation of different areas through images, as well as quantitatively evaluated the surface roughness through numerical processing. This method is effective for evaluating the condition of hair after shampooing and the application state after applying styling products.
![[Analysis Case] Observation of Surface Microstructure of Injection Needles Using AFM](https://image.mono.ipros.com/public/product/image/366/2000337901/IPROS7148448177528455981.jpg?w=280&h=280)
You can evaluate the condition of the surface coating film.
The metal processing surfaces of injection needles are generally rough, but it is known that using injection needles with rough surfaces can cause discomfort to patients. Therefore, to reduce surface friction caused by rough surfaces, biologically inert silicone lubricants are used on injection needles. This document presents a case study evaluating roughness using AFM (Atomic Force Microscopy) based on the presence or absence of surface processing with silicone lubricants.
![[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM](https://image.mono.ipros.com/public/product/image/586/2000341899/IPROS7337506788074164359.jpg?w=280&h=280)
High-resolution TEM observation of crystal defects detected by PL mapping.
In PL (photoluminescence) mapping, it is possible to identify the positions of crystal defects from the luminescent areas. Furthermore, by performing high-resolution STEM observation (HAADF-STEM images) at the same locations, we can capture stacking defects. In this case study, we investigated commercially available SiC power devices using PL mapping and STEM. After identifying the positions of stacking defects through PL mapping, we conducted μ-sampling at the defect edge and performed cross-sectional STEM observation.
AFM: Atomic Force Microscopy Method
AFM is a method that scans the surface of a sample with a fine probe and measures nano-scale surface topography in three dimensions. It can measure a wide range of materials, not only for the evaluation of metals, semiconductors, and oxides, but also for soft materials such as hair and contact lenses. This document presents various AFM images of different materials.
![[Analysis Case] Comprehensive Evaluation of CMOS Sensors](https://image.mono.ipros.com/public/product/image/e32/2000429038/IPROS13356383045444052292.jpg?w=280&h=280)
Reverse engineering of smartphone components
We will introduce a case where lenses and CMOS sensor chips were extracted from commercially available smartphones and evaluated. Depending on the purpose, we created flat and cross-sectional surfaces through polishing and FIB processing, and confirmed the layered structure and layers using TEM and SEM. Furthermore, we identified the types of films using EDX. At MST, we can handle everything from disassembly to analysis in a consistent manner.
![[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls](https://image.mono.ipros.com/public/product/image/ba3/2000436245/IPROS14534065085904199956.jpg?w=280&h=280)
Quantitative evaluation of the roughness of trench sidewalls related to device characteristics.
In recent years, SiC has been attracting attention as a material for high-voltage devices. The trench MOSFET structure is necessary for the high integration of devices, and the application development for SiC devices is progressing. Since the channel region of the trench MOSFET structure is the trench sidewall, the flatness of the trench sidewall is related to the reliability of the device. This document introduces an example of quantitatively evaluating the roughness of the trench sidewall of SiC trench MOSFETs using AFM (Atomic Force Microscopy).
![[Analysis Case] STEM/EDX and Image Simulation for Crystal Structure Evaluation](https://image.mono.ipros.com/public/product/image/1ac/2000436264/IPROS14066786507828876230.jpg?w=280&h=280)
The evaluation of the crystal structure can be performed based on the STEM images and the results of atomic composition measurements.
By measuring the sample, it is possible to evaluate the crystal structure through the combination of results obtained and simulations. This document introduces a case study in which the crystal structure is discussed by comparing the results obtained from HAADF-STEM and EDX measurements on polycrystalline neodymium magnets with simulated images using the respective measurement conditions. The combination of measurement results and computational simulation results allows for a deeper understanding of the crystal structure.
![[Analysis Case] SiC by SMM and SNDM](https://image.mono.ipros.com/public/product/image/fee/2000436273/IPROS17153871049787203742.jpg?w=280&h=280)
You can evaluate the p/n polarity and carrier concentration distribution of the diffusion layer in SiC devices.
In recent years, SiC has attracted attention as a material for high-voltage devices. The trench MOSFET structure allows for high integration of the elements, and applications for SiC devices are also being advanced. On the other hand, there are challenges regarding the dopant activation rate of SiC devices, making performance evaluation important. In this instance, we will introduce a case where carrier polarity determination was conducted using SNDM (Scanning Nonlinear Dielectric Microscopy) and carrier concentration distribution was evaluated using SMM (Scanning Microwave Microscopy) for SiC trench MOSFETs.
![[Analysis Case] Structural Analysis of DRAM Chips using TEM and SEM](https://image.mono.ipros.com/public/product/image/4af/2000442428/IPROS10654005163802715970.jpg?w=280&h=280)
Reverse engineering of DRAM on the product's internal substrate.
We will conduct a comprehensive analysis of DRAM, a representative memory, from product level to device microstructure analysis through TEM observation. By performing appearance observation, layer analysis, and Slice & View, we will grasp the overall structure, control the FIB processing position at the nanoscale, and observe the microstructure of the memory section through TEM imaging after thin section formation.
![[MFM] Magnetic Force Microscopy Method](https://image.mono.ipros.com/public/product/image/8b9/2000475543/IPROS6176896315983391970.jpg?w=280&h=280)
MFM is a measurement technique that uses a probe coated with a magnetic film to measure the leakage magnetic field occurring near the sample surface and obtain magnetic information.
- Qualitative information on the magnetic properties of the sample can be obtained. - Imaging of attraction and repulsion due to leakage magnetic fields is possible. - A signal of magnetic force proportional to the magnitude of the gradient of the leakage magnetic field can be obtained, but quantitative evaluation is not possible. - AFM images can also be obtained simultaneously.
![[Analysis Case] Extraction of Active Material from Battery Cathode Material and Data Analysis](https://image.mono.ipros.com/public/product/image/5aa/2000814042/IPROS98283106871971457826.png?w=280&h=280)
We determined the particle size of active substances from SEM images using deep learning and data analysis.
Deep learning enables the extraction of target objects from images. Additionally, by analyzing the regions corresponding to the obtained targets, information can be obtained in numerical form. In this instance, we used deep learning to extract active material particles and detect cracks in cross-sectional SEM images of battery cathode materials. Extraction is also possible for 3D data, such as Slice&View data. We extracted particles with and without cracks from the 3D data and calculated their respective particle sizes. Measurement methods: SEM, Slice&View, computational science, AI, data analysis Product fields: Solar cells, secondary batteries, fuel cells Analysis purposes: Structural evaluation, shape evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.
![[Analysis Case] Surface Shape Analysis of GaN Substrates](https://image.mono.ipros.com/public/product/image/cce/2001183298/IPROS92166202777756485461.jpeg?w=280&h=280)
Visualization of step-terrace structures by AFM.
Gallium nitride (GaN), a wide bandgap semiconductor, is used in a wide range of fields such as power devices and communication/optical devices. When fabricating devices, the shape and roughness of the wafer surface significantly impact device performance. During the growth of GaN wafers, a step-terrace structure is formed on the surface due to stress effects from lattice mismatch with the supporting substrate. This document introduces a case where the step-terrace structure of the GaN substrate surface was visualized using AFM, and the terrace width, step height, surface roughness, and off-angle were evaluated. Measurement method: AFM Product fields: Power devices, electronic components, lighting Analysis purpose: Shape evaluation, structural evaluation For more details, please download the document or contact us.
![[Analysis Case] Failure Analysis of SiC Transistor using Slice & View](https://image.mono.ipros.com/public/product/image/3df/2001211099/IPROS78039083306307985293.jpeg?w=280&h=280)
Check the leak path by 3D visualization of SEM images.
For the SiC transistor, where the leak location was identified using a backside emission microscope, cross-sectional SEM observation was conducted using Slice & View. With Slice & View, it is possible to capture images of the leak location without missing it by performing cross-sectional observations at a pitch of several tens of nanometers around the leak area. By converting the SEM images into 3D, the leak path can be confirmed. Measurement method: Slice & View, EMS Product area: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.
![[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors](https://image.mono.ipros.com/public/product/image/e4f/2001211179/IPROS36565606930820041336.jpeg?w=280&h=280)
It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.
We conducted Slice & View on a SiC transistor where the leak location was identified using a backside emission microscope, and performed magnified observation and SEM-EDX analysis at the confirmed destruction site. Bright contrast was observed in the reflected electron images, indicating the segregation of Si and Ni. It is believed that some segregation of elements such as Si and Ni occurred due to the destruction caused by the leak. Measurement methods: Slice & View, SEM-EDX, EMS Product field: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.
![[Analysis Case] Composition Analysis of Particles on a Wafer](https://image.mono.ipros.com/public/product/image/2001543422/IPROS8523528241685709768.jpg?w=280&h=280)
Shape observation and simple quantitative analysis using SEM-EDX.
Control of particles in the semiconductor wafer manufacturing process is extremely important for ensuring wafer quality. In this case study, we estimated what the particles were on a Si wafer through SEM observation, EDX analysis, and simple quantification. The SEM equipment, which has high spatial resolution in the submicron range and can scan areas of several centimeters, allows for rapid inference of what the particles on the wafer are based on shape and composition information, enabling quick identification of the generation process. Analysis linked to coordinate data from defect inspection equipment is also possible.
![[Analysis Case] Composite Analysis of Specific Areas within Electronic Devices (C0572)](https://image.mono.ipros.com/public/product/image/387108/IPROS6210838054388776479.png?w=280&h=280)
Non-destructive assessment of specific areas inside the device! Evaluation of detailed structure and composition information of specific areas through cross-sectional observation.
Our company offers technologies suitable for structural evaluation of electronic devices, and we propose analytical methods tailored to the observation field and objectives. In a case where we investigated specific areas of a device using X-ray CT and FIB-SEM, we first used X-ray CT to observe the internal structure of the entire sample and identify specific areas. Next, we used FIB-SEM to confirm the detailed structure of the specific structures identified on the vias. 【Measurement and Processing Methods】 ■[SEM] Scanning Electron Microscopy ■[SEM-EDX] Energy Dispersive X-ray Spectroscopy (SEM) ■X-ray CT Method ■[FIB] Focused Ion Beam Processing *For more details, please download the PDF or feel free to contact us.
![[Analysis Case] SEM Observation of Wide-Area Cross-Section Using Xe-PFIB](https://image.mono.ipros.com/public/product/image/387108/IPROS17891796211199755303.png?w=280&h=280)
Observation of cross-sections with an accuracy of several tens of nanometers and a size of several hundred micrometers is possible!
We offer wide-area cross-sectional SEM observation (C0610) using Xe-PFIB. The metal bonding that electrically connects the electrodes of integrated circuits, electrodes, printed circuit boards, and semiconductor packages has a diameter of several tens of μm to several hundred μm. With Xe-PFIB (Xe-Plasma Focused Ion Beam), we can target processing positions on the order of several tens of nm and create cross-sections of several hundred μm square, allowing for a detailed understanding of the entire view at the center of the bonding. 【Measurement and Processing Methods】 ■ [SEM] Scanning Electron Microscopy ■ X-ray CT Method ■ [FIB] Focused Ion Beam Processing *For more details, please download the PDF or feel free to contact us.
![[Analysis Case] Local Area Evaluation of Positive Electrode Active Material in Secondary Batteries (C0614)](https://image.mono.ipros.com/public/product/image/387108/IPROS15602713706541963129.png?w=280&h=280)
Composition, crystal structure, and chemical state evaluation near the surface of living materials are possible!
Our company conducts local area evaluation of positive electrode active materials for secondary batteries (C0614). It is known that in lithium-ion secondary batteries, the crystal structure of the active material surface and the valence of metal elements change due to ion extraction and insertion during charge and discharge, as well as degradation. In a case where TEM was used for local area evaluation to assess composition, crystal structure, and chemical state, it was found through EDX that AlOx is coated on the outermost layer. Additionally, electron diffraction and EELS revealed that the crystal structure and valence differ between the surface and the interior of the active material. [Measurement and Processing Methods] ■ [(S)TEM] Scanning Transmission Electron Microscopy ■ [TEM-EDX] Energy Dispersive X-ray Spectroscopy (TEM) ■ [TEM-EELS] Electron Energy Loss Spectroscopy *For more details, please download the PDF or feel free to contact us.
![[Analysis Case] Evaluation of Mechanical Properties of Hair Cross-Sections Prepared by Microtome Method](https://image.mono.ipros.com/public/product/image/2001548679/IPROS11176891493987811359.jpg?w=280&h=280)
It is possible to evaluate the elastic modulus of the internal structure of soft materials.
When evaluating the internal structure of materials, it is necessary to expose the internal structure while maintaining it through cross-sectional processing techniques such as cutting and polishing. This document introduces a case where the microtome method, which has a relatively small impact from processing damage, was used to create cross-sections of hair, followed by AFM observation of the internal structure and evaluation of elastic modulus. The microtome method is a cutting processing technique widely used in the field of soft materials, such as rubber materials and biological samples, and this approach has made it possible to evaluate the mechanical properties of the internal structure of these materials. [Measurement and Processing Methods] [AFM] Atomic Force Microscopy [AFM-MA・AFM-DMA] Mechanical Property Evaluation (Elastic Modulus Measurement, Dynamic Viscoelasticity Measurement) Ultra Microtome Processing *For more details, please download the PDF or feel free to contact us.
