東芝ナノアナリシス List of Products and Services

As part of the widely used "hydrogen annealing evaluation" in semiconductor manufacturing, we present a case measured using TDS (Thermal Desorption Spectroscopy). By performing mass spectrometry while heating in a vacuum, we were able to confirm the desorbed gas components from the Ta plate and the desorption temperature of hydrogen. Additionally, by mass analyzing the desorbed gases, we can identify the types of gases and understand the desorption behavior of specific components. [Case Overview] - Heating desorption gas profile from the sample - Identification of desorbed gas species and comparison of desorbed gas amounts through mass spectrometry (m/z = 1 to 199) *For more details, please download the PDF or feel free to contact us.

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We would like to introduce our "Thin Film X-ray Diffraction (XRD)." In addition to identifying the crystal structure of thin films at the nanometer level, we can also analyze the film density, thickness, and roughness of multilayer films through X-ray reflectivity measurements. By incidenting X-rays with good parallelism at a very shallow angle to the sample, we can achieve an extremely shallow penetration depth of the X-rays, allowing for the evaluation of thin film crystallinity using In-Plane XRD and the measurement of thin film physical properties using XRR. 【Features】 ■ In-Plane XRD (In-Plane Rotation Measurement) Evaluation of crystalline thin films at the nanometer level ■ XRR (X-ray Reflectivity Measurement) Evaluation of film density, thickness, and (surface/interface) roughness ■ Support for general thin film methods (fixed θ 2θ scanning) *For more details, please download the PDF or feel free to contact us.

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We would like to introduce our service "Compound Identification of Hydroxyapatite Granules by XRD." There are many compounds with the same constituent elements but different properties. For example, there are many compounds referred to as calcium phosphate, one of which is hydroxyapatite (HAp), used as a medicinal component; however, elemental analysis generally cannot identify the specific compound species. X-ray diffraction (XRD) allows for the identification of compounds with the same constituent elements through crystal structure identification. 【Features】 ■ Detection of atomic periodicity ■ Identification of compounds that are difficult to distinguish by elemental analysis alone, through comparison with XRD pattern databases ■ Quantification of crystal phases is possible in cases where the Rietveld method can be applied ■ Measurement of insulators and organic materials is possible (non-destructive analysis) ■ Measurement range is from sub-mm to several cm *For more details, please download the PDF or feel free to contact us.

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We would like to introduce our "Temperature Cycle Test for Electronic Components." Electronic components are made up of various materials with different coefficients of thermal expansion. As a result, stress can occur due to these differences in thermal expansion coefficients, which may lead to defects. This test involves placing the test samples in an environment that alternates between specified low and high temperatures, applying stress over a specified number of cycles as part of the environmental testing. 【Applicable Standards】 ■ JIS C60068-2-14 (IEC 60068-2-14) ■ JEITA EIAJ ED-4701/100A ■ JEDEC JESD22-A104 ■ MIL-STD-883 METHOD 1010 *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

In the "Solder Heat Resistance Test for Surface Mount Components," we simulate the process from moisture-proof packaging of surface mount components to reflow, evaluating their thermal stress resistance. In cases of defects that occur during the test, moisture accumulated inside the components vaporizes due to thermal stress, causing volume expansion and resulting in stress. This stress can lead to delamination and cracks at the interface. Since these anomalies are difficult to detect visually, we use an ultrasonic microscope to inspect the internal adhesion state. [Test Flow] ■ Confirm initial state ■ Dehumidify in a constant temperature chamber ■ Humidify in a constant temperature and humidity chamber ■ Apply thermal stress using a reflow device ■ Confirm post-test state *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

"X-ray photoelectron spectroscopy (XPS)" is a surface analysis technique that allows for the compositional analysis of ultra-thin surfaces at the nanometer level. It is also capable of evaluating the electronic states (chemical bonding, valence, hybridization, electron correlation) of each element that makes up the material, and by using a neutralization gun, it can measure the surfaces of insulators as well, making it widely used for the analysis of various material surfaces. Please feel free to contact us when you need assistance. 【Features】 ■ Compositional analysis of the topmost surface at the nanometer level (Li and above) is possible ■ Sensitivity is approximately 0.1 atomic% ■ Electronic state analysis (chemical bonding, valence, gap, etc.) is possible ■ Measurement of insulators and organic materials is possible (non-destructive analysis) ■ Measurement area ranges from several tens to several hundred µm in diameter * For more details, please download the PDF or feel free to contact us.

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We would like to introduce our "Cross-sectional Observation of Automotive Bumper Coating Films." The coating film of automotive bumpers has a multi-layer structure using several types of paint. In general mechanical polishing for cross-sectional observation, issues such as the detachment of added fine particles occur, making it difficult to confirm the correct structure. By using the ion milling method (Ar+ ion beam) for processing, we can observe the cross-sectional structure and elemental distribution without damaging the fine structures such as detachment. 【Features】 ■ SEM observation allows for clear confirmation of the multi-layer structure of the coating film and the added fine particles. ■ By combining elemental analysis, we can clearly confirm the distribution of each added particle. *For more details, please download the PDF or feel free to contact us.

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We would like to introduce our "Observation of the Microstructure of Anodized Aluminum." Aluminum materials in commercially available frames form an anodic oxide film (anodizing) on the surface for purposes such as corrosion resistance and wear resistance. In general mechanical polishing processes, the pore structure of the anodized layer can be destroyed, making it impossible to confirm its structure. By using ion milling (Ar+ ion beam) for processing, we can observe the cross-sectional structure and elemental distribution without damaging the microstructure. 【Elemental Distribution Analysis by EPMA】 ■ The microstructure of the anodized layer can be clearly observed through SEM observation. ■ It can be confirmed that the pores are neatly filled due to sealing treatment. ■ By combining elemental analysis, we can also confirm the distribution of Sn (tin), which is thought to have precipitated due to electrolytic coloring on the lower side of the anodized layer, as well as the distribution of S residues in the sulfuric acid bath (H2SO4). *For more details, please download the PDF or feel free to contact us.

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We would like to introduce our "Defect Evaluation using Synchrotron Topography." In compound semiconductors such as SiC and GaN, there are many crystal defects that significantly affect device characteristics. With this evaluation, it is possible to non-destructively assess defects across the entire surface of large-diameter wafers ranging from 4 inches to 6 inches with high resolution. 【Features】 ■ Visualization of various crystal defects with a resolution of a few micrometers ■ Detection of threading edge dislocations (TED) that cannot be detected by laboratory equipment ■ Evaluation of the types and distribution of defects *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We conduct "X-ray irradiation tests" at our company. X-rays have properties that make them suitable for non-destructive and quick verification of the internal state of materials, and they are used in various situations. On the other hand, interactions between X-rays and materials can affect product performance and may cause abnormalities such as discoloration. We would like to introduce X-ray irradiation tests as a method to evaluate the effects of X-rays on materials and their resistance. 【X-ray Irradiation Device Specifications】 ■ Tube Voltage: 40–160 (kV) ■ Tube Current: 1.0–12.5 (mA) ■ Tube Power: Max 800W ■ Built-in Filter: Be 0.8mm *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our evaluation of buried interfaces using "Hard X-ray Photoelectron Spectroscopy (HAXPES) with Synchrotron Radiation." X-ray Photoelectron Spectroscopy (XPS) allows for the analysis of surface composition and state, making it an essential technique for surface analysis. While laboratory-type XPS (Al Kα: 1.5 keV) is limited to evaluating extreme surfaces of about 3 nm, using external facilities for Hard X-ray Photoelectron Spectroscopy (HAXPES) at 8 keV enables the evaluation of deeper regions, such as buried interfaces in multilayer structures and stack structures close to actual devices. 【Features】 ■ Greater detection depth compared to conventional XPS ■ Measurement of photoelectrons from deeper energy levels ■ Easier state analysis due to the absence of overlaps with simultaneously generated Auger electrons ■ Utilization of third-generation synchrotron facilities (SPring-8) as a high-brightness X-ray source *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Coating Film Analysis of Metal Surfaces." When evaluating coating films (resins or ceramics) formed on metal surfaces for purposes such as corrosion prevention, cross-sectional processing using ion milling allows for clear observation of the bonding state with the metal and the dispersion state of the resin material components. Ion milling is used for preparing samples for cross-sectional observation, such as in SEM. Ar ions are irradiated onto the relevant part of the sample, and processing is performed using the sputtering effect. **Advantages of Ion Milling Processing:** - Allows for confirmation of the material in its original state without detaching inclusions. - If voids are observed, it can be identified that they are not due to detachment. - Element distribution confirmation (EDS analysis) enables clear observation of particles within the white resin, the interface with the metal, and the layering of the plating layer on the metal surface. *For more details, please download the PDF or feel free to contact us.*

• Contract Analysis

We would like to introduce our "Observation of Resist Pattern Cross-Sectional Shapes." In the evaluation of the quality of resist patterns formed in complex three-dimensional shapes, we utilize ion milling technology equipped with a sample cooling mechanism and a three-axis ion source to perform cross-sectional processing without damage on heat-sensitive resist pattern samples. This allows for high-resolution observation of the cross-sectional shapes of multiple patterns over a wide area (approximately 3mm in width). Please feel free to contact us when you need our services. 【Features】 - By using a three-axis ion source, we can achieve a wider processing width compared to a one-axis type, allowing for the examination of cross-sectional shapes of multiple patterns. - Processing while cooling prevents damage to the resist. - By processing from different directions with varying shapes, it is possible to confirm each cross-sectional shape. *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

We would like to introduce our "Cross-sectional Observation of Ceramic Sintered Bodies." In the cross-sectional observation of porous materials, techniques such as polishing have resulted in unclear observations due to stress effects from processing and contamination from polishing materials. By applying cross-sectional ion milling, low-damage cross-sectional processing has become possible, allowing for clear cross-sectional observation and analysis. 【Features】 ■ The shape of sintering pores and the internal condition can be accurately observed. ■ Element distribution can be clearly observed. ■ Low-damage cross-sectional processing is possible. ■ Clear cross-sectional observation and analysis can be performed. *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

The "high-performance magnetic field SIMS" is a device that can analyze all elements with high sensitivity in depth direction. With high-performance SIMS capable of high-sensitivity and high mass resolution analysis even in low-energy analysis, it has become possible to achieve high-precision measurements in challenging, extremely shallow regions. As a result, it can now be applied to semiconductor devices, which are advancing in miniaturization and diversification of materials. 【Features】 ■ High sensitivity measurement (high transmission rate) ■ High mass resolution ■ Various measurements possible from ultra-low energy analysis to standard analysis ■ Equipped with a high-brightness ion gun ■ Automatic measurement with high repeatability precision, capable of measuring up to 25 samples *For more details, please download the PDF or feel free to contact us.

• Analytical Equipment and Devices

We would like to introduce our "Cross-Section Observation of Porous Soft Materials (Paper)." When observing materials such as paper composed of porous and soft substances, conventional cross-section preparation methods like cutting and polishing can cause significant deformation during processing, making them unsuitable for observation. Low-damage processing through cross-section ion milling minimizes processing deformation, allowing for detailed structural understanding through cross-section observation. 【Features】 - The layered structure of cellulose fibers and the dispersion state of filler particles can be clearly confirmed. - Voids are also clearly visible. - Processing deformation can be minimized. - Detailed structures can be understood through cross-section observation. *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

We would like to introduce our "Composition and State Analysis of Magnetic Metal Multilayers." GMR elements and MTJ elements (spintronic devices that include magnetic metal multilayers) are being advanced for practical use in HDD magnetic heads and MRAM. The characteristics of such magnetoresistive elements can vary significantly due to their structure and interfaces, making it important to analyze their behavior using a combination of various analytical methods. 【Interface State Analysis】 ■XPS ■HAXPES ■TEM-EELS ■3DAP (APT) *For more details, please download the PDF or feel free to contact us.

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We would like to introduce our "Impurity Analysis of the Gate Electrode/Oxide Film Interface." To investigate the distribution and bonding states of impurities at the gate electrode/gate insulating film interface, a depth resolution of less than 1 nm is required. In such cases, measurements from the backside (gate insulating film side) enable more reliable analysis. Since the detection depth of XPS is shallow, typically less than a few nm, the Si substrate portion is removed from the backside through polishing or wet etching before conducting XPS measurements. 【Information Obtained】 ■ Distribution and bonding states of impurities near the gate electrode/gate oxide film interface ■ Compositional changes near the gate electrode/gate oxide film interface ■ Band alignment, etc. *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

We would like to introduce our "Surface and Thin Film Analysis of Semiconductors." We propose effective analyses for material evaluation and failure mode identification in the process development, process management, and failure analysis of semiconductor devices. We provide detailed information that is useful for research and development, manufacturing processes, and failure analysis by examining the chemical composition, bonding states, and impurity distribution of surfaces. Please feel free to contact us when you need our services. 【Top Surface】 ■Composition: XPS ■Bonding State: XPS ■Contamination: TOF-SIMS, ICP-MS ■Roughness: AFM, SEM *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

We would like to introduce our "Thermal Desorption Gas Analysis (TDS)." By understanding the gases emitted from materials and components, it is possible to confirm surface contaminants, verify process improvement measures, and estimate the causes of defects. In Thermal Desorption Gas Analysis (TDS), when the sample is heated in a vacuum, we can identify the types of gases emitted from the surface and interior (qualitative analysis) and perform semi-quantitative analysis of the gas volume. 【Features】 ■ Sample size: Up to 10mm x 10mm and 4mm (thickness) ■ Sample heating atmosphere: High vacuum (10^-7 Pa) ■ Temperature - Room temperature to 1,400℃ (sample stage temperature) - Room temperature to approximately 1,150℃ (Si substrate calibration temperature*) * High-precision temperature correction is performed using embedded thermocouples. * For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Strain Analysis of Si Wafers." In the manufacturing process of semiconductor devices, residual stress generated during the thin grinding of wafers can lead to product failures, defects, and degradation. In this instance, we will perform mechanical polishing on Si wafers to reduce the surface crystallinity and evaluate the changes in crystallinity before and after polishing using X-ray rocking curve measurements. The X-ray rocking curve method can detect the strain of crystals without shape changes such as warping. 【Technical Overview】 ■ Rocking Curve Measurement - By fixing the detector at the angle position where diffraction occurs and rotating only the sample, the angular distribution of rotation that satisfies the diffraction condition can be measured. - The peak width and intensity of the angular distribution (rocking curve) reflect the variation in the tilt of the crystal planes, serving as an evaluation index for crystallinity. - For single crystals, small strains can be evaluated through high angular resolution measurements. *For more details, please download the PDF or feel free to contact us.

• Contract Analysis

In recent years, in SiC MOSFETs, an n-buffer layer on the order of several hundred nanometers has been inserted between the n-substrate and the n-drift layer to address on-resistance issues. In the evaluation of the n-buffer layer, it is necessary to thin the n-drift layer, which is positioned above and is on the order of several micrometers, to improve depth direction resolution and to flatten its surface. We have developed a technology that provides high flatness to the surface of SiC compounds processed as thin films. As a result, we successfully captured the thickness and nitrogen (N) concentration of the n-buffer layer using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, please feel free to contact us.

• Other analysis and evaluation services

In GaN devices, the diffusion of components (impurities) originating from the pre-process of the gate oxide film leads to insulation failures, making it necessary to identify their concentration distribution and diffusion sources. We have developed a technology that provides high flatness to the surface of thin-film processed GaN compounds. As a result, we successfully captured the diffusion of impurities from the upper side of the gate oxide film using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Thin Film Evaluation using X-ray Reflectivity Measurement (XRR)." X-ray Reflectivity Measurement (XRR) allows us to obtain information about surface (interface) roughness, film density, and film thickness by fitting the X-ray profile, which shows attenuation and interference fringes near total external reflection, with a calculated profile. Please feel free to contact us if you have any inquiries. 【Thin Films that can be Analyzed】 ■Sample Surface: Mirror-like (Surface Roughness less than 5nm) ■Sample Size: 30mm x 30mm or larger *Please consult us if the size is smaller ■Film Thickness: 2nm to 500nm ■Required Information: Film structure and film composition information *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

The component evaluation of the wafer bevel area is generally conducted using TEM or TOF-SIMS; however, both of these methods have limitations in sensitivity and quantification, making it difficult to evaluate trace components. By using a newly developed dedicated fixture, we have established a method for high-precision component evaluation using sensitivity- and quantification-focused SIMS (D-SIMS). Please feel free to contact us when needed. 【Technical Overview】 ■ Fixed with a dedicated fixture to prevent positional shifts of samples in an unstable tilted state and to reduce detection stability issues. ■ Measurement positions can be selected with high precision and flexibility. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

In the process of forming an oxide film, controlling the thickness of the oxide film is one of the very important factors. Therefore, we estimated the thickness of the surface oxide film non-destructively using photoelectron spectroscopy. In samples covered with a thin oxide film, many elemental photoelectron peaks show a two-peak structure corresponding to the oxide component and the substrate component. By measuring the spectral intensity of each component, we can estimate the thickness of the oxide film. There are several analytical methods to determine film thickness non-destructively, but compared to other methods, the ability to estimate the thickness at specific locations is a characteristic of this method. *For more detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.*

• Other analysis and evaluation services

Hard X-ray photoelectron spectroscopy (HAXPES) has made significant progress by enabling bulk-sensitive measurements in the hard X-ray region, whereas measurements in the soft X-ray region had been mainstream until now. On the other hand, HAXPES measurements under total reflection conditions of X-rays are also being conducted for the purpose of analyzing surface states. Under total reflection conditions, X-rays are incident at the critical angle for total reflection, which limits the depth of penetration into the material. Applying this characteristic to HAXPES allows for the analysis of bonding states of interfacial oxide layers and segregated impurities at the atomic layer level. *For more detailed information, please refer to the attached PDF document. Feel free to contact us for further inquiries.

• Other analysis and evaluation services

We would like to introduce the XPS analysis of the discolored copper material surface. The causes of copper discoloration can be due to the formation of corrosion products, as well as differences in the thickness of the surface oxide film (resulting in color changes due to light interference phenomena). Therefore, in addition to qualitative analysis of the very surface using X-ray photoelectron spectroscopy (XPS), conducting depth profile analysis is also effective. In the attached PDF document, we present a case study where qualitative surface analysis and depth profile analysis of the copper material were conducted, comparing the discolored areas with the normal areas. Please take a look. [Evaluation of Copper Surface Discoloration] ■ Conducting depth profile analysis in addition to qualitative analysis of the very surface using X-ray photoelectron spectroscopy (XPS) is effective. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Particle Evaluation of Polymer Micelles in DDS Formulations using SAXS." DDS (Drug Delivery System) is a drug transport system that selectively acts on the necessary areas within the body, and it is highly anticipated for its ability to reduce side effects. In DDS, polymer micelles are often used, and our company evaluates the particle shape and size distribution of these polymer micelles using SAXS (Small-Angle X-ray Scattering). 【Features】 ■ SAXS: An analytical method that uses X-ray scattering to analyze the structure of materials ■ Sample types: Applicable to both solids and liquids ■ Non-destructive analysis ■ Capable of calculating the shape (spherical, elliptical, etc.) and size distribution of nanoparticles *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our evaluation of the oxidation state of titanium oxides (TiOx). In the XPS analysis of titanium oxides, it is possible to investigate the oxidation state from the peak positions, spectral shapes, and satellite positions of the core levels and valence band spectra. In the attached PDF document, we provide examples of comparative evaluations of various oxidation states of titanium oxide, so please take a look. 【Features】 ■ It is possible to investigate the oxidation state from the peak positions, spectral shapes, and satellite positions of the core levels and valence band spectra. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce the application of XPS analysis to tablets. X-ray photoelectron spectroscopy (XPS) is an analytical method that observes electrons emitted when X-rays are irradiated onto a sample, allowing us to extract information about the electrons present within the sample. This technique provides information on the chemical composition, bonding states, and valence of the surface. Please feel free to contact us if you have any inquiries. 【Features】 ■ Composition analysis of the topmost surface at a few nm (Li～) is possible ■ Sensitivity is approximately 0.1 atomic% ■ Electronic state analysis (chemical bonding, valence, gap, etc.) is possible ■ Measurement of insulators and organic materials is possible (non-destructive analysis) ■ Measurement area ranges from several tens to several hundred μm in diameter *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

In SIMS analysis, when evaluating the diffusion of impurities from a high-concentration layer to a lower layer film, the effects of surface roughness and sputter etching may influence the crater edge effect and knock-on effects from the high-concentration layer. A method of evaluation that is not affected by these influences is Backside SIMS, which conducts SIMS analysis from the substrate side. In the attached PDF document, we introduce the evaluation of the diffusion distribution of F from a SiO2 film (FSG film) to a lower SiO2 film using Backside SIMS, so please take a look. 【Principle of Backside SIMS】 - By polishing the backside of the Si substrate to thin it, we can approach from the backside. - It is possible to control the remaining thickness of the Si substrate to create a thin film, to thin specific areas of patterned samples, or to selectively stop the etching of Si layers such as SiO2. In cases where there are layers that can stop etching, it is also possible to completely remove the Si substrate portion by wet etching. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

Secondary Ion Mass Spectrometry (SIMS) is a highly sensitive analytical technique capable of identifying and quantifying trace impurity elements at the ppb level. Since measurements are conducted while sputtering, it is possible to obtain the depth distribution of impurities within the film. Please feel free to contact us when you need assistance. 【Features】 ■ Magnetic Field SIMS: Used for evaluating impurities that require high sensitivity. ■ Quadrupole SIMS: Used for evaluations that require depth resolution and for assessing multilayer films that include insulating films. ■ Time-of-Flight SIMS: Used for evaluating the molecular structure level of trace substances on the surface, as well as for assessing the contamination state of organic materials and minute foreign substances on the surface. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

Regarding aluminum die-cast parts, information such as the presence of internal defects can be obtained through non-destructive observation using a 3D X-ray microscope (X-ray CT). Additionally, if defects are confirmed internally, the defects can be exposed and assessed through cross-sectional processing using techniques such as ion milling. When inclusions are present, the cause of occurrence can be estimated by confirming their composition. Please feel free to contact us if you have any inquiries. [Overview] ■ Acquisition of internal information through non-destructive observation (X-ray CT) ■ Cross-sectional structural analysis (cross-sectional processing + elemental analysis) *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

As an evaluation of the quality of the printed layer on the metal surface, the bonding state with the metal and the dispersion state of the coloring components can be observed through cross-sectional processing. Additionally, by conducting depth-direction analysis using TOF-SIMS with GCIB from the surface, the distribution of components from the surface coating layer to the metal and the coloring components can be confirmed. Please feel free to contact us when needed. 【GCIB Features】 ■ The energy per ion beam atom is low, making it suitable for depth-direction analysis of organic films and others. ■ High mass number fragments that reflect the molecular structure information of the film can be detected. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Quantitative Analysis of X-ray Diffraction Data Using Rietveld Analysis." By applying Rietveld analysis to X-ray diffraction data, it is possible to quantify the mass fraction of crystalline phases, crystallite size, and uniform strain in the sample without the need for standard samples. Please feel free to contact us if you have any inquiries. 【Features】 ■ Quantification of the mass fraction of crystalline phases, crystallite size, and uniform strain in the sample without the need for standard samples. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

Secondary Ion Mass Spectrometry (SIMS) enables depth profiling analysis with high sensitivity and high mass resolution for all elements. Furthermore, our company has added automation features from sample introduction to analysis, allowing for high-precision automated measurements. As a result, we can provide rapid feedback for process development and defect analysis in semiconductor devices, where quick responses are required. 【Features】 ■ High sensitivity measurement: Capable of high sensitivity measurement of heavy elements such as Ag, In, and Sb. ■ High mass resolution measurement ・M/ΔM = ~10,000 ・Evaluation of contamination levels of P, Al, Fe, Ni, etc., in Si and SiO2. *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Evaluation of Crystallinity of Ultra-Thin Films using High-Temperature XRD." High-temperature X-ray diffraction (XRD) is an effective method for understanding phase changes, chemical reactions, and changes in lattice constants of various materials under different temperature conditions. In the attached PDF document, we present a case study evaluating the changes in the crystal structure of nm-order ultra-thin films using In-Plane XRD and high-temperature measurements, so please take a look. 【Features of High-Temperature + In-Plane XRD】 ■ A method that involves incident X-rays at very low angles and scans the detector in the in-plane direction ■ The incident X-rays do not penetrate deeply from the surface and can only detect diffraction planes that are perpendicular to the surface ■ Information about crystals can be obtained even for ultra-thin films of a few nm *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

We would like to introduce our "Thin Film Analysis and Evaluation" services. Thin films are one of the important factors for enhancing the functionality of electronic devices. We propose comprehensive analysis of thin films. Please feel free to contact us when you need our services. 【Details】 ■ Composition Evaluation ■ Impurity and Contamination Evaluation ■ Bonding State ■ Density Evaluation ■ Evolved Gases ■ Shape Observation *For more details, please download the PDF or feel free to contact us.

• Other analysis and evaluation services

This document provides a detailed explanation of the "Contract Analysis Service Reliability Evaluation" conducted by Toshiba Nanoanalysis Corporation. It richly introduces various tests, including temperature cycle tests that apply thermal stress to electronic components to confirm their resistance, and X-ray irradiation tests that evaluate the effects and resistance of materials. Please feel free to consult us when you need our services. [Contents] ■ Reliability Testing ■ Temperature Cycle Testing of Electronic Components ■ Observation of Aging Degradation through Temperature Cycle Testing ■ Observation of Aging Degradation through Thermal Shock Testing ■ X-ray Irradiation Testing ■ Solder Heat Resistance Testing of Surface Mount Components ■ Bond Strength Testing of Semiconductor Packages *For more details, please refer to the PDF document or feel free to contact us.

• Contract Analysis
• Contract measurement
• Contract Inspection

This document provides a detailed explanation of the "Contract Analysis Service Non-destructive Observation" conducted by Toshiba Nanoanalysis Corporation. It includes numerous examples such as observing current paths within printed circuit board wiring patterns using a magnetic field microscope, and examining the adhesion of wafer bonding using an ultrasonic microscope (reflection method). Please feel free to consult us when needed. [Contents] ■ Magnetic Field Microscope ■ Ultrasonic Microscope (SAM) ■ 3D X-ray Microscope (X-ray CT) ■ Flow of Contract Analysis Services *For more details, please refer to the PDF document or feel free to contact us.

• Contract Analysis
• Contract measurement
• Contract Inspection

Orally disintegrating tablets are desired to disintegrate with a small amount of water. To design and manufacture tablets with such properties, it is important to elucidate the mechanism of water absorption and disintegration. By using high-brightness X-rays from synchrotron radiation facilities, it is possible to observe the water absorption and disintegration process of the tablets in real-time through X-ray transmission. 【Real-time X-ray Transmission Observation Overview】 ■4s: Water droplet spreads and gradually absorbs water ■182s: Partial disintegration of the tablet's interior *For more details, please refer to the PDF document or feel free to contact us.

• X-ray Inspection Machine

We will introduce a case that contributed to customer process improvement by capturing the changes in the internal structure of OD tablets before and after a rigorous test. X-ray CT is a non-destructive method that visualizes the spatial distribution of X-ray absorption rates within a sample. When changes occur inside the sample, there may be corresponding changes in the distribution of X-ray absorption rates, and by quantifying these changes, it is possible to infer what kind of changes have taken place inside the sample. The value "skewness," which represents the shape of the histogram of X-ray absorption rates within a region of a certain size, is one of the useful quantities that indicates the state of the sample's interior. 【Flow of Data Acquisition and Analysis】 ■Sample ■X-ray CT Observation ■3D X-ray Absorption Rate Data ■Data Analysis ■3D Distribution of Skewness of Absorption Rate Distribution in Multiple Regions *For more details, please refer to the PDF document or feel free to contact us.

• X-ray Inspection Machine

The size of the particles contained within the capsule is said to be closely related to the effectiveness of the drug, and obtaining a particle size distribution is required. With a 3D X-ray microscope (X-ray CT), it is possible to non-destructively investigate the particle size distribution of internal materials by visualizing the differences in X-ray absorption rates within the object in three dimensions. In the internal observation of capsules containing salt (sodium chloride), it is possible to identify individual salt particles from the X-ray CT images of the capsule containing salt particles and statistically analyze the size and surface area of the particles. [Example] ■ Internal observation of capsules containing salt (sodium chloride) *For more details, please refer to the PDF document or feel free to contact us.

• Other microscopes and optical inspection equipment

Depending on the tablet pressing conditions, there may be voids remaining inside the tablets or changes in density distribution. 3D X-ray microscopy (X-ray CT) allows for non-destructive, three-dimensional observation, enabling the quantification of void distribution and density changes, which can assist in improving tablet pressing conditions. Please feel free to contact us if you have any inquiries. 【Relationship between tablet density distribution and X-ray CT image brightness】 ■ The X-ray absorption rate of air is almost zero, resulting in low brightness. ■ The distortion of the brightness histogram varies depending on the proportion of solids. ■ A higher porosity results in lower skewness. *For more details, please refer to the PDF document or feel free to contact us.

• Other microscopes and optical inspection equipment