![[Analysis Case] Vapor Pressure Calculation of Ga-containing Precursor by Molecular Dynamics Simulation](https://image.mono.ipros.com/public/product/image/387108/IPROS13258153585504310688.jpg?w=280&h=280)
[Analysis Case] Vapor Pressure Calculation of Ga-containing Precursor by Molecular Dynamics Simulation
Effective for predicting the vapor pressure of metal complexes used as precursors in ALD and CVD!
ALD (Atomic Layer Deposition) is a method that allows for uniform film formation at the atomic layer level, even for high aspect ratio structures, and is being focused on as a useful technique for the miniaturization, integration, and fine wiring of semiconductors. Since it is a vapor-phase deposition method that utilizes the "adsorption saturation of precursors on the growth surface," high vapor pressure precursors are required to improve the coverage rate of precursors on the substrate and the deposition rate. This document predicts the vapor pressures of various Ga-containing precursors through molecular dynamics calculations and compares them with experimental values.
- Company：一般財団法人材料科学技術振興財団 MST
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