Production Remote Plasma Ion Beam Sputtering Device
Optimal solution for high-rate reactive film deposition production equipment.
By using a helicon plasma source as the ion source, this groundbreaking method accelerates high-density ions obtained from it by applying a bias voltage to the target, achieving high-rate and highly directional film deposition. Independent current control for the ion source, target, and substrate allows for precise control of not only the sputtering rate but also various reactive sputtering processes such as oxide and nitride films. It enables high-rate film deposition of materials that are difficult to deposit with conventional equipment, such as ferromagnetic materials and dielectric/insulating films from metal targets. <Features> ■ High-speed, high-efficiency ion beam sputtering Optimal solution for dielectric and ferromagnetic targets ■ Helicon plasma ion source and target application Achieves both high-speed sputtering and low contamination Reduces running costs by improving target utilization efficiency Low maintenance due to gridless structure Sputtering while keeping the substrate at low temperatures through remote plasma configuration ■ Single wafer processing Improved step coverage Composite film deposition using cluster tools ■ Excellent directionality High-directionality ion beams enable uniform film thickness deposition, resulting in excellent step coverage in film formation.
- Company：ティー・ケイ・エス
- Price：Other
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