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Sputtering Equipment Product List and Ranking from 43 Manufacturers, Suppliers and Companies

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
This ranking is based on the number of page views on our site.

Sputtering Equipment Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. テルモセラ・ジャパン 本社 Tokyo//Industrial Electrical Equipment
  2. 神港精機 東京支店 Tokyo//Industrial Machinery
  3. サンユー電子 Tokyo//Testing, Analysis and Measurement
  4. 4 Bühler K.K. Kanagawa//Food Machinery
  5. 5 ジャパンクリエイト Saitama//Testing, Analysis and Measurement

Sputtering Equipment Product ranking

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. 【nanoPVD-S10A】Magnetron Sputtering Device テルモセラ・ジャパン 本社
  2. Desktop RF Sputtering Device 'SVC-700RFIII' サンユー電子
  3. HELIOS Sputtering Device for Optical Thin Films Bühler K.K.
  4. 4 Semi-automatic grinding device for steel samples SAB-2-200 ハルツォク・ジャパン
  5. 5 Supports multiple metals! It is an ultra-compact coater in the smallest class in the industry. サンユー電子

Sputtering Equipment Product List

46~60 item / All 136 items

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Polarization Measurement Sample Stage UNIT 'TP-POL-1'

Can be mounted on a terahertz spectrometer! A stage for measuring the effects of polarization due to the sample.

The "TP-POL-1" is a stage designed to measure the effects of polarization by samples that can be mounted on the terahertz spectrometer "TeraProspector." It consists of a polarizer that cuts off components of the incident and detected signals other than the horizontal polarization component, and a sample holder that allows for the rotation of the inserted sample. 【Specifications】 ■ Model: TP-POL-1 ■ Sample rotation angle: 360° (can be set to any angle manually) ■ Extinction ratio: <10^-4 *For more details, please refer to the PDF document or feel free to contact us.

  • Spectroscopic Analysis Equipment
  • Testing Equipment and Devices

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Magnetron Sputtering Device "LA-S2020"

Magnetron sputtering equipment that can also be made as a film thickness electrode for various devices and sensors.

Labotech Co., Ltd.'s "LA-S2020" is a 2-inch magnetron DC sputtering device with a counter-parallel disk type. It allows for metal (Au/Pt, etc.) coating when observing non-conductive samples using a scanning electron microscope (SEM). This sputtering device can produce thin film electrodes (below 50nm) for various devices and sensors. It achieves efficient glow discharge with simple operations in a short time, enabling the production of sputtered films with excellent granularity. 【Features】 ■ Easy operation ■ High efficiency ■ Low cost *For more details, please contact us or download the catalog.

  • Other physicochemical equipment

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Small sputtering device

The compatible substrate can be processed up to a maximum of φ1 inch! Equipment equipped with a dual gas nozzle.

The "Compact Sputtering Device" is a laboratory high-vacuum thin film deposition system equipped with a 1.3-inch magnetron sputter cathode. It is equipped with an RF power supply with a matching unit for discharge. It features a dual gas nozzle capable of supporting oxidation reaction sputtering. Additionally, it can process substrates up to a maximum diameter of 1 inch. 【Features】 ■ Equipped with a 1.3-inch magnetron sputter cathode ■ Comes with an RF power supply with a matching unit for discharge ■ Features a dual gas nozzle capable of supporting oxidation reaction sputtering ■ Can process substrates up to a maximum diameter of 1 inch *For more details, please refer to the external link page or feel free to contact us.

  • Sputtering Equipment

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Osmium coater

Can coat osmium with low damage!

We handle the "Osmium Coater," a device that coats high magnification SEM samples, delicate organic materials, and samples with complex surface structures with low-resistance osmium metal (amorphous & fine particles) for conductive treatment. It adopts the "low-voltage discharge CVD method using a hollow cathode sample stage." High-density plasma is generated throughout the entire hollow cathode cylinder, allowing for uniform coating, making it recommended for those concerned about sample size or height. 【Lineup】 ■HPC-1SW  ・CH size: Inner diameter 120mm × Height 90mm  ・Sample size: φ95mm, Height 40mm ■HPC-20  ・CH size: Inner diameter 120mm × Height 77mm  ・Sample size: φ95mm, Height 45mm *For more details, please download the PDF or feel free to contact us.

  • Other electric meters

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2-inch 2-yuan sputtering device 'HMS2-300'

The flat heater can heat up to a maximum of 600°C! A sputtering device compatible with film formation under vacuum and gas replacement atmospheres!

The "HMS2-300" is a 2-inch dual-target sputtering device capable of heating up to 600°C through flat heater heating, allowing for film formation at high temperatures. It supports film formation under vacuum and gas replacement atmospheres. It is equipped with a 2-inch magnetron sputter cathode and can be expanded to a maximum of three targets. Options include an L/L chamber, a movable film thickness gauge, and a bias mechanism. 【Features】 ■ Capable of heating up to 600°C through flat heater heating ■ Supports film formation under vacuum and gas replacement atmospheres ■ Equipped with a 2-inch magnetron sputter cathode (expandable to a maximum of three targets) ■ Options for L/L chamber, movable film thickness gauge, and bias mechanism ■ Compact installation space of W535×D1000×H1800mm *For more details, please refer to the PDF document or feel free to contact us.

  • Vacuum Equipment

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Solve the challenges of conventional sputtering technology with "RAM Force"!

Reduce damage to the substrate by over 60%! Improve film formation speed while maintaining low damage characteristics.

"RAM Force" is a roll-to-roll sputtering device that can perform multilayer film deposition of optical films and metals on plastic films. Not only can it evaluate the performance of RAM cathodes (low-damage cathodes), but it also allows you to test your applications under lab conditions and transition from pilot lines to mass production lines. 【Features】 ■ Patent obtained ■ Reduces damage to substrates by over 60% * Comparison between conventional planar sputtering and RAM cathodes ■ Increases deposition speed by more than three times * Comparison between conventional opposing sputtering and RAM cathodes ■ Unique technology from Keihin Lamtech * For more details, please refer to the PDF materials or feel free to contact us.

  • Sputtering Equipment

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RAM Cathode Principle

Solved the conventional issues! Significantly improved the film formation speed while maintaining low damage characteristics.

In conventional planar sputtering, significant damage was inflicted on the substrate, and in opposing sputtering, the film deposition rate was slow, posing practical challenges. Our "RAM Cathode" successfully generates dense plasma near the target surface by surrounding the target on all sides. By having argon ions collide with great force against the target, we have resolved the issues that existed until now. 【Features】 ■ Reduces damage to the substrate by over 60% compared to conventional planar cathodes ■ Achieves a film deposition rate more than three times that of conventional opposing cathodes *For more details, please refer to the PDF document or feel free to contact us.

  • others

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Powder sputtering device

We also support contract film formation and on-site experiments based on customer-requested samples!

The "Powder Sputtering Device" is a machine that coats thin films on the surface of powders with a diameter of a few micrometers using vacuum and plasma. It has a stirring mechanism based on a barrel swing motion, allowing for film formation using RF or DC sputtering methods. Applications are expected in preventing the deterioration of powder materials, controlling the electrical conductivity of powder surfaces, and resource conservation through thin film formation of rare materials. 【Features】 ■ Uniform film formation with the stirring mechanism ■ No chemical reactions required ■ High purity and strong adhesion of the film *For more details, please download the PDF or feel free to contact us.

  • Sputtering Equipment

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Parallel Moving 3D RF Sputtering Device 'MSS600-3'

Control of sputter pressure is possible with gas introduction and pressure control valves!

The "MSS600-3" is a three-dimensional RF sputtering device using a rectangular cathode measuring W100 x H500mm. The substrate size is W200 x H300mm, and it is deposited while being transported in the X direction. Additionally, the substrate can be set to any time between 30 seconds and 15 hours, allowing for film thickness adjustment and various types of heterogeneous layered film deposition. 【Features】 ■ Automatic sputtering function enables labor-saving long-duration sputtering work. ■ Uses a rectangular cathode manufactured by GenCore, allowing for uniform sputter gas introduction near the target. ■ The process chamber is divided into three rooms with rotating shutters to prevent sputter contamination diffusion. ■ Sputtering is possible while moving the substrate at a constant speed, among other features. *For more details, please download the PDF or feel free to contact us.

  • Vacuum Equipment
  • Sputtering Equipment

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Sputtering device 'Star.500-EOSS(R)'

Developed for the purpose of achieving high uniformity and excellent reproducibility in the deposition of optical multilayer films!

We handle the 'Star.500-EOSS(R)' from the German company FHR. The 'Star.500-EOSS(R)' is a magnetron sputtering system designed for optical filter film deposition. To minimize particles during film deposition, a sputter-up method is employed. It accommodates flat and curved substrates up to 200mm in diameter, and a substrate heating mechanism can also be integrated. 【Features and Benefits】 ■ Outstanding reproducibility of optical multilayer films ■ Excellent film thickness uniformity ■ Improvement in film quality and defect-free deposition achieved through the combination of a cylindrical sputter cathode and sputter-up ■ Long target life and minimized variations in deposition rate due to cylindrical targets ■ Fully automated process control *For more details, please download the PDF or contact us.

  • Sputtering Equipment

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Magnetron sputtering device for high-precision optical filter film deposition

The "FHR.Star.600-EOSS" is a high-performance magnetron sputtering device developed for precise optical filter film deposition.

We will demonstrate our capabilities in the stable production of high-performance optical filters that require multilayering and high reproducibility, such as LiDAR applications, which are expected to see significant demand in the future. - Film formation that eliminates the effects of film quality changes due to target wear using a cylindrical cathode - Stable film formation of oxide films using a reactive ion source - Film formation of a wide range of multilayer films with up to four cathodes This is a device specialized for high-quality optical thin film deposition. Features: ■ Outstanding reproducibility of optical multilayer films ■ Excellent film thickness uniformity ■ Improvement of film quality and defect-free deposition through the combination of cylindrical cathodes and sputter-up ■ Continuous monitoring of the film formation state through in-situ monitoring ■ Fully automated process control *For more details, please refer to the PDF document or feel free to contact us.

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  • Sputtering Equipment

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Sputtering device FHR.Star100-Tetra-Co

FHR Star.100-Tetra Co is a very compact sputtering device designed for MEMS and high-performance optical products.

This system is equipped with three sputtering sources and a pre-cleaning etcher, all arranged in a confocal shape, and it is also possible to add a load lock and a transport chamber to enhance productivity. The sputtering sources are equipped with a 100mm diameter shutter, which allows for film deposition control by managing this shutter. Additionally, the distance between the source and the substrate can also be controlled. These controls are optimized for film deposition through auto-control via programming. Main applications: Manufacturing of MEMS products and high-performance optical products Dimensions (L×W×H): 2.3 m × 1.3 m × 2.1 m Weight (with load lock): 1,700 - 2,000 kg Maximum substrate size: Diameter 150 mm Maximum substrate carrier: Diameter 220 mm Compatible process gases: Argon, oxygen, and others For more details, please contact us.

  • Sputtering Equipment

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Remote plasma ion beam sputtering device

We achieve film formation by freely controlling reactive sputtering and alloy sputtering.

Independent current control is performed for the ion source, target, and substrate. With independent control, not only the sputter rate but also various reactive sputtering processes such as oxide and nitride films can be freely controlled. This device strongly supports advanced material research and process development, enabling the deposition of difficult-to-deposit materials such as ferromagnetic films, Co-sputtering of metal and ceramic targets, and dielectric/insulating films from metal targets. Independent control of ion supply and sputter rate → Control of sputter rate, film quality, and crystal structure → Control of ionization rate of target materials High-directionality film deposition → High-directionality film deposition characteristic of ion beam sputtering Multi-target mechanism → Wide-ranging multilayer film deposition Independent control of multiple targets → Co-sputtering alloy deposition by controlling the sputter rate of each target → Multilayer deposition by switching targets Conformal film deposition through bias application control to the substrate → Conformal film deposition even under adverse conditions such as deep trenches and overhangs.

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  • Sputtering Equipment
  • Plasma Generator
  • Other surface treatment equipment

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Production Remote Plasma Ion Beam Sputtering Device

Optimal solution for high-rate reactive film deposition production equipment.

By using a helicon plasma source as the ion source, this groundbreaking method accelerates high-density ions obtained from it by applying a bias voltage to the target, achieving high-rate and highly directional film deposition. Independent current control for the ion source, target, and substrate allows for precise control of not only the sputtering rate but also various reactive sputtering processes such as oxide and nitride films. It enables high-rate film deposition of materials that are difficult to deposit with conventional equipment, such as ferromagnetic materials and dielectric/insulating films from metal targets. <Features> ■ High-speed, high-efficiency ion beam sputtering Optimal solution for dielectric and ferromagnetic targets ■ Helicon plasma ion source and target application Achieves both high-speed sputtering and low contamination Reduces running costs by improving target utilization efficiency Low maintenance due to gridless structure Sputtering while keeping the substrate at low temperatures through remote plasma configuration ■ Single wafer processing Improved step coverage Composite film deposition using cluster tools ■ Excellent directionality High-directionality ion beams enable uniform film thickness deposition, resulting in excellent step coverage in film formation.

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  • Sputtering Equipment

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