日本セミラボ List of Products and Services

We would like to introduce our spread resistance measurement device, the 'SRP-170/2100'. By making contact with two probes in the depth direction on a diagonally polished Si wafer, we can measure the specific resistivity profile in the depth direction of Si, the thickness of the EPI layer, the depth of the PN junction, and the carrier concentration distribution from the spread resistance value between the probes. The "SRP2000" automates the conditioning of the probes, measurement of the bevel angle, and data input for standard samples, allowing for continuous automatic measurement of multiple samples, with a maximum of 6 samples able to be loaded simultaneously. 【Features】 ■ World-standard carrier concentration distribution and profile measurement device ■ Supports measurement automation (SRP-2100) ■ Surface resistance measurement available as an option (SRP-170) *For more details, please refer to the PDF document or feel free to contact us.

• Other measurement, recording and measuring instruments
• Semiconductor inspection/test equipment
• Other inspection equipment and devices

"En-Vison" is a crystal defect inspection device that can non-contact and non-destructively measure and evaluate crystal defects within wafers, such as dislocation defects, oxygen precipitates, and stacking faults. It provides a high dynamic range for both defect size (15nm to sub-micron) and density (E6 to E10/cm3). By significantly improving detection sensitivity in the depth direction of the wafer and covering a wide range of densities and applications, it greatly enhances the detection sensitivity of stress-induced dislocation defects in the depth direction, which cannot be confirmed near the surface, compared to conventional methods. 【Features】 ■ Non-destructive / Non-contact ■ Visualizes defects that cannot be confirmed by conventional inspection devices ■ Target area: Active device area (near the surface) ■ Detection in raw silicon and at the depth of active devices ■ No specialized knowledge required *For more details, please refer to the related link page or feel free to contact us.

• Semiconductor inspection/test equipment
• Other inspection equipment and devices

For the manufacturing of semiconductor devices, carrier mobility is a very important parameter. The "LEI-1610 Series" is a non-contact mobility measurement device capable of measuring various semiconductor carrier transport characteristics such as mobility, carrier concentration, and sheet resistance. Carrier mobility, sheet resistance, and sheet charge density can be measured non-contact and destructively on Si wafers ranging from 2 inches to a maximum of 8 inches, as well as on compound semiconductor (GaAs, GaN, InP, etc.) epi wafers. 【Features】 ■ Non-contact mobility measurement using microwave reflection ■ Standard measurement device for high-frequency device characteristics ■ High correlation with measurement results from the Hall effect ■ Multi-carrier modeling option *For more details, please refer to the related link page or feel free to contact us.

• Other measurement, recording and measuring instruments

The "EIR-2500" is a unique epitaxial film thickness measurement device equipped with an infrared spectroscopic reflectometer and FTIR functionality. It achieves high-throughput epitaxial film thickness measurements and fully complies with applicable SEMI/CE standards. Additionally, the EIR product series is based on high-performance and reliable electronic components, improving equipment uptime and reducing maintenance needs. 【Features】 ■ Wafer size: 4 to 12 inches ■ Materials: Si, SOI, SiC, SiGe, III-V, etc. ■ FTIR functionality ■ High-precision measurement of epitaxial film thickness ■ Measurement of film thickness in the transition region *For more details, please refer to the related link page or feel free to contact us.

• Coating thickness gauge
• Other measurement, recording and measuring instruments

Hall effect measurement plays a very important role in the evaluation of electronic materials and electronic devices. However, in the measurement of low mobility materials, high resistance and thin film materials, or low resistance materials, the fact remains that small signals can be buried in noise, making evaluation difficult. By performing lock-in detection in an AC magnetic field, the PDL system (Parallel Dipole Line system) becomes an innovative magnetic trap system that realizes a unique camelback field confinement effect. Due to the diamagnetic levitation effect, diamagnetic materials such as graphite are trapped at the center. The Hall effect measurement system PDL-1000 can measure sheet resistance, carrier concentration, and mobility with wide range and high sensitivity in research and development applications. The PDL (Parallel Dipole Line) technology used in the PDL-1000 from Semilab is a patented technology developed by IBM.

• Other inspection equipment and devices

This document introduces the measurement principles of a spectroscopic ellipsometer. It covers topics such as "polarization," which refers to light with a regular vibration direction of electric and magnetic fields, the principles of the ellipsometer, and optical interference. The content is presented clearly along with diagrams and graphs, so please take a moment to read it. 【Contents (excerpt)】 ■ What is polarization ■ Changes to the sample surface ■ What is an ellipsometer ■ Principles of the ellipsometer ■ What is the Brewster angle 〈 We will hold a webinar! *Details 〉 ■ Theme: Explanation of the procedure for creating analysis models for spectroscopic ellipsometers – Beginner's edition – ■ Date and Time ・ April 22 (Thursday) 10:00 AM ・ May 13 (Thursday) 4:00 PM ■ Content Using a typical sample structure as an example, we will explain the procedure for creating analysis models. Explanation of analysis using effective medium approximation models, Cauchy models, and Tauc-Lorentz models. ■ Participation Please check our company website (link below) for details. *For more information, please refer to the PDF document or feel free to contact us. *If you would like a demo, please indicate "Demo request" using the contact button below.

• Analytical Equipment and Devices
• Spectroscopic Analysis Equipment
• Coating thickness gauge

We introduce a combined system of Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). Using the zoom function of the SEM, the AFM chip can be directly moved to the target area. Information about surface morphology and mechanical, electrical, and magnetic properties can be obtained with nanometer resolution. AFM can be utilized with the Merlin series and Crossbeam series, and existing systems can be updated with a simple door replacement. 【Features】 ■ SEM and FIB intersect with a cantilever chip ■ Composite measurements of all three methods can be performed at the exact same point in space and on the sample ■ Designed to achieve 3D resolution at the single atom level ■ Maintains a minimum SEM working distance of 5mm while allowing a viewing angle of 0° to 85° with the SEM ■ Supports in-situ chip sharpening with FIB *For more details, please refer to the PDF document or feel free to contact us.

• Other microscopes

The "IND-1000" is a nanoindenter that measures applied load and displacement, allowing for the assessment of hardness and elastic modulus of various materials such as thin films, resins, and metals. By equipping the nanoindenter head on an AFM, it is also possible to directly observe the indentations. Additionally, it features precise automatic positioning adjustments using a high-precision microscope, enabling real-time feedback control for displacement measurement and load force. 【Features】 ■ Wide range (maximum load: 10mN to 5N) ■ High-precision automatic XYZ stage ■ Can be mounted on AFM (optional) ■ Heat management through high-quality piezoelectric expansion elements ■ No need for regular calibration ■ Easy indenter tip switching *For more details, please refer to the related link page or feel free to contact us.

• Other measurement, recording and measuring instruments

The "LEI-1510 series" is a non-contact sheet resistance measurement device manufactured by the former Reihiton company. By attaching a robot, it is possible to quickly measure and process multiple samples. It solves the reproducibility issues caused by probe contact contamination and the contact condition that occur with the four-probe method. It measures sheet resistance non-contact and destructively for Si wafers ranging from 2 inches to a maximum of 8 inches, as well as compound semiconductor (GaAs, GaN, InP, etc.) epi wafers. 【Features】 - Solves reproducibility issues caused by probe contact contamination and contact conditions - Capable of quickly measuring and processing multiple samples - Excellent measurement linearity over a wide range of 0.035 to 3200 ohm/sq. - Measurement data can be viewed as a three-dimensional graphic map on a PC monitor *For more details, please refer to the PDF document or feel free to contact us.

• Other measurement, recording and measuring instruments
• Semiconductor inspection/test equipment

The "spectroscopic ellipsometer" is a thin film evaluation device that accurately measures the thickness, refractive index, and extinction coefficient of thin films, including epitaxial films, in a non-contact and non-destructive manner. It is also capable of evaluating the composition ratios of compound semiconductor materials. The main evaluation and measurement items are the "thickness of thin films," "epitaxial film thickness," "refractive index," "extinction coefficient," "composition ratio of compound semiconductors," and "dopant concentration." 【Main Evaluation and Measurement Items】 ■ Thickness of thin films ■ Epitaxial film thickness ■ Refractive index, extinction coefficient ■ Composition ratio of compound semiconductors ■ Dopant concentration Please feel free to contact us for information on the specifications and pricing of the device. *Demonstrations are also possible. If you wish to request a demonstration, please indicate "Request for Demo" using the contact button below.

• Analytical Equipment and Devices
• Spectroscopic Analysis Equipment
• Coating thickness gauge

The "SE-2000" is a rotating compensator type spectroscopic ellipsometer that can measure the film thickness and refractive index of thin films with high precision in a "non-contact" manner. It is equipped with user-friendly analysis software, making the analysis process easy. It supports measurements across a wide wavelength range from deep ultraviolet to near-infrared. It also accommodates inspections related to material composition ratios, anisotropy, Mueller Matrix, degree of polarization resolution, reflectance/transmittance, dopant concentration, and retardation (R0, Rth), making it versatile for a wide range of applications. 【Features】 ■ High-precision CCD and high-resolution PMT equipped ■ Rich database of optical models ■ Various expansion options available ■ Numerous sales achievements 〈 Seminar Details 〉 ■ Theme: Explanation of the Procedure for Creating Analysis Models for Spectroscopic Ellipsometers - Beginner Level - ■ Dates and Times ・ April 22 (Thursday) 10:00 AM ・ May 13 (Thursday) 4:00 PM ■ Content Using a sample of a general structure, we will explain the procedure for creating analysis models. Explanation of analyses using effective medium approximation models, Cauchy models, and Tauc-Lorentz models. * Please check our company website (link below) for participation details.

• Optical Measuring Instruments
• Spectroscopic Analysis Equipment
• probe

The "DLS-83D/1000" is a measurement device capable of measuring bulk defects and interface states, including temperature, frequency scans, and C-V characteristics. The "DLS-1000" supports high-sensitivity measurements of bulk defects and interface states at the level of 10^8 cm³. It comes standard with a library for easy analysis. It features a unique system that employs a high-sensitivity analog/digital method (analog for measurement and digital for data processing) and is equipped with user-friendly software. 【Features】 ■ Capable of high-sensitivity contamination detection (2x10^8 atoms/cm³) ■ Equipped with a wide range of interfaces for cryostats ■ Capable of measuring temperature, frequency scans, and C-V characteristics ■ Over 100 units delivered worldwide, demonstrating extensive track record *For more details, please refer to the PDF document or feel free to contact us.

• Other measurement, recording and measuring instruments
• Semiconductor inspection/test equipment

This is a non-contact heavy metal contamination, CV/IV, and film evaluation device with over 400 units in operation worldwide. The sensitivity for iron concentration measurement has achieved E8 by adopting DSPV, contributing to the improved yield of recent CMOS image sensors. It is capable of CV measurement of compound semiconductors and can measure the concentration distribution and profile in the plane non-contactly.

• Other inspection equipment and devices

The JPV method (Junction Photo Voltage method) allows for fast and reproducible mapping measurements. 【Features】 - Non-contact, non-destructive measurement - No adjustment of probes required - No special sample preparation needed for measurement - Measurement possible even with oxide films or coatings on the surface - High spatial resolution distribution measurement (mapping) can be performed quickly - Highly reproducible measurements are possible - Can be integrated with Semilab's benchtop platforms WT-2000, WT-2500, WT-3000, or inline wafer testing equipment.

• Other inspection equipment and devices
• Semiconductor inspection/test equipment

The QC2500 series can monitor the resistivity of epitaxial wafers non-contactly. Using the surface photovoltage (SPV) method as the measurement principle, it detects changes in the surface potential of the wafer by irradiating it with pulsed light and measures the width of the depletion layer. Since the width of the depletion layer in a strong inversion state is proportional to the impurity concentration, it performs impurity concentration measurements and converts them to resistivity (ASTM).

• Other inspection equipment and devices

The surface charge analysis device is ideal for monitoring contamination and damage that occur during processes such as semiconductor front-end management, particularly thermal oxidation films, CVD film formation, metallization, cleaning, and etching.

• Other inspection equipment and devices

It is possible to measure the thin film thickness, Young's modulus, and Poisson's ratio of a wafer substrate in a non-contact and non-destructive manner.

• Other inspection equipment and devices

It is a device that can be used inline because it does not require electrode formation, does not damage the wafer, and leaves no contamination.

• Other inspection equipment and devices

The SRP (Spreading Resistance Profiler) device measures the resistivity profile of silicon in the depth direction, the thickness of the EPI layer, the depth of the PN junction, and the carrier concentration distribution by making contact with two probes on a diagonally polished silicon wafer in the depth direction and measuring the spreading resistance value between the probes.

• Other inspection equipment and devices

Non-contact measurement of deep trenches and TSV shapes of power devices, the depth of DRAM capacitor trenches, CD measurements, and recess measurements. High aspect ratio trench measurements are possible with the proprietary technology MBIR (Model Based Infrared). It also supports the measurement of the vertical profile of the doping concentration of epitaxial films.

• Other inspection equipment and devices

The "MCV-530/530L/2200/2500" is a device that enables the evaluation of electrical characteristics of semiconductor silicon wafers and the characteristics of MOS device oxide films, among others. Traditionally, gate electrodes such as Poly-Si or Al were deposited on the wafer, and after forming MOS structures or Schottky structures, CV/IV characteristic evaluations were conducted. This product has its own gate electrode, allowing for the acquisition of electrical characteristics of oxide films and wafers without the need to create a metal gate. It provides quick feedback through process monitoring, reduces development time in R&D, and lowers costs. 【Features】 ■ No need for electrode formation due to the mercury probe ■ Excellent reproducibility ・Schottky: 0.3% (1σ) / MOS: 0.1% (1σ) ■ Mapping of the wafer surface is possible ■ Safe and easy mercury exchange enabled by a newly developed mercury exchange mechanism *For more details, please refer to the PDF document or feel free to contact us.

• Other inspection equipment and devices

Supports high-sensitivity measurement of bulk internal defects at a level of 108 cm3 and interface states (DLS-1000). Additionally, it comes standard with a library for easy analysis. 【Features】 ● Capable of high-sensitivity contamination detection (2x108 atoms/cm3). ● Equipped with a wide range of interfaces for cryostats. ● Capable of measurements such as temperature, frequency scans, and C-V characteristics. ● Easily profiles depth direction, distribution of traps, and identification of elements and defects, making it effective for analyzing defects and crystal imperfections. (By comparing measurement results with the list of DLTS signals of contaminants in the library, contaminants can be easily identified.) ● High-sensitivity analog/digital system (measurements are analog, data processing is digital) with a unique system employing lock-in averaging method and user-friendly software. ● Over 100 units delivered worldwide, demonstrating extensive delivery experience.

• Other inspection equipment and devices

The PV-2000 is a comprehensive measurement device for solar cell development that combines the technologies of Semilab and SDI. It can be equipped with various heads for developing high-efficiency solar cells, such as for passivation layer evaluation.

• Testing Equipment and Devices
• Other inspection equipment and devices

**Principle of the Device** ■ The Generation Laser generates excess minority carriers and heats areas where obvious damage exists. ■ The excess minority carrier gradient forms the refractive index gradient. ■ The Probe Laser utilizes the refractive index gradient or surface thermal information to measure junction depth, dose level, and PAI depth. ■ The Generation Laser is modulated at 2 kHz, achieving an excellent S/N ratio. ■ The long-wavelength Probe Laser does not heat the sample.

• Other inspection equipment and devices

When slicing silicon blocks with a wire saw, it is possible to reduce damage and wire breakage by inspecting the internal foreign matter locations in advance with IRB-30 and taking appropriate measures.

• Semiconductor inspection/test equipment
• Other measurement, recording and measuring instruments
• Analytical Equipment and Devices

We can also provide devices for mapping measurements of solar cell blocks/wafers/cells.

• Semiconductor inspection/test equipment
• Other electronic measuring instruments
• Analytical Equipment and Devices

It is possible to measure without breaking the wafer.

• Semiconductor inspection/test equipment
• Other measurement, recording and measuring instruments
• Analytical Equipment and Devices

The PN determination of silicon wafers/blocks can be performed instantly. It is a portable pen-type tester that allows for non-contact and non-destructive P/N determination.

• Semiconductor inspection/test equipment
• Other electronic measuring instruments
• Analytical Equipment and Devices

Inline full inspection and sorting of wafers/cells is possible.

• Semiconductor inspection/test equipment
• Other electronic measuring instruments
• Analytical Equipment and Devices

We have a very strong track record in QC monitoring.

• Semiconductor inspection/test equipment
• Distance measuring device
• Spectroscopic Analysis Equipment

- In FTIR measurements, polarization allows for the acquisition of more information. - Since reference measurements are not necessary, measurements can be conducted quickly.

• Optical Measuring Instruments
• Analytical Equipment and Devices
• Other environmental analysis equipment

No pre-treatment is required, and measurements can be taken quickly at 20 minutes per point compared to conventional methods.

• Semiconductor inspection/test equipment
• Other measurement, recording and measuring instruments
• Analytical Equipment and Devices

The lifetime measurement device WT-2000PI uses e-PCD technology to measure minority carrier lifetime in single crystal silicon ingot state without passivation treatment.

• Semiconductor inspection/test equipment
• Other measurement, recording and measuring instruments
• Analytical Equipment and Devices

Various electrical measurement mapping can be performed as an option. (Diffusion length, iron concentration, resistivity, sheet resistance, LBIC, reflectivity, IQE, PN determination)

• Semiconductor inspection/test equipment
• Other measurement, recording and measuring instruments
• Analytical Equipment and Devices

The Japan Semi-Lab spectroscopic ellipsometer 'GES5E' has achieved non-destructive measurement of thin film optical properties, which was impossible with conventional optical measuring instruments. It calculates the thickness of thin films and multilayer films, as well as the wavelength dispersion of the refractive index (N, K values) of each layer. It is active in various fields, from research and development to inline production quality control. 【Measurable Physical Properties】 ■ Thickness optical refractive index ■ Refractive index gradient and material composition ■ Dopant concentration

• Optical Measuring Instruments
• Spectroscopic Analysis Equipment
• probe

Crystal defects in silicon wafers can be measured quickly.

• Semiconductor inspection/test equipment
• Other electronic measuring instruments
• Analytical Equipment and Devices

In the flat panel display manufacturing market, we have a significant track record in quality control applications.

• Semiconductor inspection/test equipment
• Other measurement, recording and measuring instruments
• Analytical Equipment and Devices