List of Sputtering Equipment products
- classification:Sputtering Equipment
1~60 item / All 216 items
Reduce the workload from handling heavy objects! Here are five case studies that solved customer challenges! We are also accepting free consultations and tests tailored to your work!
- Other conveying machines
Presentation of explanatory materials on JIS and ISO standards. We propose suitable safety barriers from a rich product series! Free rental of demo kits.
- Other safety and hygiene products
High-performance, cost-effective RF/DC magnetron sputtering system for research and development.
- Sputtering Equipment
- Evaporation Equipment
- Other semiconductor manufacturing equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Two thin film experimental devices are connected with a load lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected with the load lock.
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
【MiniLab】 Evaporation/Sputtering Dual Chamber System
Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
A compact multi-thin film device that incorporates sputtering, deposition, electron beam (EB), and annealing thin film modules in a 60-liter volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Flexible configuration available upon request for methods such as deposition, sputtering, and EB. Adopts a tall chamber with a height of 570mm, contributing to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact and space-saving! Ideal for research and development, flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Due to its modular embedded design, it is possible to flexibly assemble dedicated equipment according to the required film formation method. A compact thin-film experimental device that can accommodat...
- Sputtering Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Due to its modular embedded design, it is possible to flexibly assemble dedicated equipment according to the required film deposition method. A compact thin-film experimental device that can accommoda...
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact multi-film device that incorporates sputtering, deposition, EB, and annealing thin film modules in a 60L volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as sputtering, EB (electron beam), and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as evaporation, sputtering, electron beam (EB) deposition, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Due to its modular embedded design, it is possible to flexibly assemble dedicated machines according to the required film formation methods. A compact thin-film experimental device that can accommodat...
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Two thin-film experimental devices are connected with a load-lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected with the load-lock.
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Expansion to advanced packages: Processing is possible on a 510×515mm substrate.
- Sputtering Equipment
- Etching Equipment
- Annealing furnace
We will extend the life of your equipment with bolt-on and coupler-on solutions.
- Sputtering Equipment
- Solenoid Actuators
- Transport and handling robots
TKC Corporation Nagaoka Service Center Opening: We will achieve one-stop device regeneration and prolongation.
In recent years, we have received numerous requests for extending the lifespan of operational equipment. With the advancement of high functionality in both equipment and components, the specialization of repair services has progressed. Along with this specialization, it has become increasingly difficult to provide comprehensive "repairs" through integrated diagnostics and verification. With the establishment of this service center, we will offer one-stop regeneration and lifespan extension through "comprehensive diagnostics of equipment" by our skilled engineers and the "integration of specialized techniques" from partner engineers located nationwide.
Powder agglomeration measures are possible! Custom-made solutions tailored to various requests can also be produced!
- Sputtering Equipment
- Plasma surface treatment equipment
- Other surface treatment equipment
The after-sales service has also received positive feedback! By conducting regular maintenance, we achieve a longer lifespan for the equipment.
- Sputtering Equipment
From design to after-service of the equipment! We can offer various equipment proposals.
- Sputtering Equipment
Support for the entire lifecycle from device design to after-sales service!
- Sputtering Equipment
- Plasma surface treatment equipment
Under the management philosophy of 'pursuing customer satisfaction and technical expertise to the utmost and contributing to society,' we develop our business.
- Vacuum Equipment
- Evaporation Equipment
- Sputtering Equipment
High-performance, cost-effective RF/DC magnetron sputtering device for research and development.
- Other semiconductor manufacturing equipment
- Sputtering Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
From site surveys to design and construction, experienced engineers will handle it!
- Other electronic parts
- Sputtering Equipment
A film deposition platform for semiconductor wafers and advanced packaging capable of various film deposition treatments.
- Sputtering Equipment
- Etching Equipment
- CVD Equipment
Providing mass production solutions for high-speed and flexible substrate film deposition applications!
- Sputtering Equipment
- Etching Equipment
Meeting the high cleanliness standards required in the semiconductor and medical device fields. We carry out everything from precision cleaning to packaging and assembly in a consistent clean environm...
- CVD Equipment
- Sputtering Equipment
- Resist Device
Flexibility, compact design, and low investment costs! An ideal choice for small-scale production.
- Sputtering Equipment
- Etching Equipment
Extremely low Rc system design in the industry and the highest level of inter-wafer reproducibility!
- Sputtering Equipment
- Etching Equipment
Higher productivity for PLP! More process possibilities. Optimized for advanced packaging.
- Sputtering Equipment
- Etching Equipment
We have achievements such as 'sputtering equipment with GB for organic EL' and 'IBS equipment for research and development'!
- Sputtering Equipment
Achieving a substrate temperature of 900℃! Equipped with a 3-axis mechanism on the substrate stage to realize a uniform film thickness distribution.
- Sputtering Equipment
For semiconductors, MEMS, electronic components, etc.! High-speed and stable continuous film deposition is possible from single crystal epitaxial buffer layers to piezoelectric films!
- Sputtering Equipment
For semiconductors, MEMS, electronic components, etc.! High-speed and stable continuous film deposition is possible from single crystal epitaxial buffer layers to piezoelectric films!
- Sputtering Equipment
Space-saving and large capacity! Custom-made options are also available to meet various requests!
- Sputtering Equipment
We can also accommodate combinations of CVD chambers, deposition chambers, plasma cleaning chambers, etc.!
- Sputtering Equipment
Achieve high coverage in three-dimensional object film formation! Equipped with up to three sputter cathodes, it enables the layered deposition of metal films, oxide films, and more!
- Sputtering Equipment
Consultations are welcome! We handle everything in-house from design to manufacturing and assembly! If you are having trouble with various equipment manufacturing, please feel free to consult with us....
- Sputtering Equipment
Optimal solution for high-rate reactive film deposition production equipment.
- Sputtering Equipment
We achieve film formation by freely controlling reactive sputtering and alloy sputtering.
- Sputtering Equipment
- Plasma Generator
- Other surface treatment equipment
We have updated the page for the remote plasma ion beam sputtering system manufactured by PlasmaQuest.
We have updated the page for the Remote Plasma Ion Beam Sputtering System manufactured by PlasmaQuest, which has received positive feedback from various companies since its introduction. We have also included a video on Remote Plasma Target Bias Sputtering. If you have any questions or requests, please feel free to contact us.
High-rate and high-quality film formation of dielectric and ferromagnetic materials.
- Sputtering Equipment
We will exhibit at the MEMS Engineer Forum 2025.
The MEMS Engineer Forum is a unique forum operated primarily by engineers among the key players in MEMS technology, which is considered a key technology of the 21st century. At this forum, where MEMS researchers, developers, and engineers from around the world gather, we will introduce and showcase the Remote Plasma Ion Beam Sputtering System manufactured by Plasma Quest Ltd. This is an excellent opportunity to see cutting-edge technologies related to MEMS, not only from our exhibition but also from others. We cordially invite you to attend. Venue: International Fashion Center Hall 1-6-1 Yokogawa, Sumida-ku, Tokyo 130-0015, Japan Access: https://www.tokyo-kfc.co.jp/access/ Exhibited Product: Remote Plasma Ion Beam Sputtering System by Plasma Quest Ltd. https://mono.ipros.com/product/detail/2001148974 https://www.plasmaquest.com/
For engineers in the wear-resistant coating industry! Precise control of film stress.
- Sputtering Equipment
Difficult materials, various substrate shapes, and applications! Capable of accommodating a very wide range of substrate sizes.
- Sputtering Equipment
We propose value-added products with antibacterial and deodorizing properties through vacuum sputtering processing on fibers and films.
- Sputtering Equipment
A high ion current helicon plasma ion source PVD module that achieves directional film formation and enables reactive sputtering.
- Sputtering Equipment
- Plasma Generator
High-performance, high-quality magnetron sputtering cathodes! Sales, repair, and maintenance services are also available.
- Sputtering Equipment
- Vacuum Equipment
- Other metal materials
The Spatakaso Sword Service Center has been established.
Starting in April 2024, we will establish a service center for inspection and repair of the "Magnetron Sputter Cathode" manufactured by Angstrome Science in the United States. The new service center will be equipped with clean room facilities, vacuum leak checkers, and various inspection instruments to ensure comprehensive maintenance. All work will be supervised and guided by qualified personnel who have completed training at Angstrome Science, providing services similar to those in the United States. Until now, we have primarily focused on repairs due to malfunctions, but with the opening of the service center, we will also be able to offer regular maintenance. We will conduct periodic inspections of the cathodes to support operations without downtime.
Using sputtering technology in a medium vacuum environment, we have developed the world's first plating seed layer formation technology through direct copper deposition! Achieving productivity beyond ...
- Sputtering Equipment
Various high-precision pressure sensors necessary for flow control in semiconductor manufacturing equipment. Customization of modules is also possible.
- Semiconductor inspection/test equipment
- Etching Equipment
- Sputtering Equipment
Would you like to introduce the pressure controller PACE for measurement testing/line inspection of semiconductor manufacturing equipment and MEMS pressure sensors?
- Semiconductor inspection/test equipment
- Etching Equipment
- Sputtering Equipment
Would you like to introduce the PACE series for pressure calibration testing on the manufacturing line? It is also possible to reduce production costs!
- Etching Equipment
- Sputtering Equipment
- Pressure
Electrode formation processes and mounting processes for various devices such as LEDs, LDs, and FETs are possible.
- LED Module
- Sputtering Equipment
- Wafer processing/polishing equipment
Shortest half-day estimate / From metal parts to resin products, we introduce components related to semiconductor manufacturing equipment based on our track record!
- Sputtering Equipment
[Design/Customization] Winding Machine
We only accepted customization and modification design of the equipment. Customer / Precision Machinery Parts Manufacturer End User / Electronic Equipment Manufacturer Request Details / Modification design using existing equipment Main Specifications Transporting small lithium-ion battery components / Cutting from transport fixtures Reel taping / Laser marking / Reel winding Equipment Dimensions / W3,500mm × D1,200mm × H1,000mm This time, we only undertook the mechanical and equipment design. We were responsible for the mechanical design of the work transport fixture supply section, the work cutting / extraction / feeding section, and the reel winding section. The customer handled parts procurement, assembly, and other aspects outside of mechanical design. We also accept design-only projects. We can flexibly respond to customer requests, whether for custom equipment or, as in this case, using existing equipment. Our greatest strength is our ability to provide a one-stop service for the entire process from design to installation in equipment and fixture manufacturing. Please feel free to share any concerns related to equipment and fixtures, such as transport, robotics, and production facilities.
Shortest half-day estimate / We have accepted the production of equipment parts made of aluminum material.
- Sputtering Equipment
We will be exhibiting at the International Frontier Industry Messe 2021.
We are pleased to announce that we will be exhibiting at the "International Frontier Industry Messe 2021" on September 2nd (Thursday) and 3rd (Friday). 【Exhibition Booth Location】 D-63 (Hall 2) "International Frontier Industry Messe 2021" ________________ 〈Dates〉 September 2nd (Thursday) and 3rd (Friday) 〈Location〉 Kobe International Exhibition Hall 1 and 2 This is one of the largest comprehensive industrial exhibitions in Western Japan, focusing on the introduction of advanced technologies and product displays that serve as a foundation for new business creation, as well as facilitating technical exchanges and business matching. ______________________________________________________ At this exhibition, the organizers will implement measures to prevent the spread of COVID-19. Additionally, our staff will conduct health management through temperature checks, wear masks at all times, ensure thorough hand sanitization, and maintain social distancing during customer interactions as part of our infection prevention measures. Admission is free. We sincerely look forward to your visit. We will continue to strive to meet your expectations, and we kindly ask for your continued support. Thank you very much.
This processing requires a significant amount of positioning. We maintain a guarantee of ±0.05.
- Sputtering Equipment
A new PVD device proposed by a company that knows Endura inside and out.
- Sputtering Equipment
Equipped with three sources of cathodes in a compact tabletop size. It is also possible to produce insulating thin films, oxide, and nitride thin films.
- Sputtering Equipment
Information on major suppliers! Sputtering target market and supply chain.
- Sputtering Equipment